NP80N04PLG

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04MLG, NP80N04NLG, NP80N04PLG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N04MLG-S18-AY Note NP80N04NLG-S18-AY Note NP80N04PLG-E1B-AY Note NP80N04PLG-E2B-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube Tape 1000 p/reel Note Pb-free (This product does not contain Pb in the external electrode.) PACKAGE TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g TO-263 (MP-25ZP) typ. 1.5 g FEATURES Logic level Built-in gate protection diode Super low on-state resistance - NP80N04MLG, NP80N04NLG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N04PLG RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 4.5 V, ID = 35 A) High current rating ID(DC) = ±80 A Low input capacitance Ciss = 4600 pF TYP. Designed for automotive application and AEC-Q101 qualified (TO-220) (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D19797EJ1V0DS00 (1st edition) Date Published May 2009 NS Printed in...