DATA SHEET
MOS FIELD EFFECT TRANSISTOR NP80N04MLG, NP80N04NLG, NP80N04PLG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR NP80N04MLG, NP80N04NLG, NP80N04PLG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect
Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP80N04MLG-S18-AY Note NP80N04NLG-S18-AY Note NP80N04PLG-E1B-AY Note NP80N04PLG-E2B-AY Note
LEAD PLATING Pure Sn (Tin)
PACKING Tube
50 p/tube
Tape 1000 p/reel
Note Pb-free (This product does not contain Pb in the external electrode.)
PACKAGE TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g
TO-263 (MP-25ZP) typ. 1.5 g
FEATURES Logic level Built-in gate protection diode Super low on-state resistance
- NP80N04MLG, NP80N04NLG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
- NP80N04PLG RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
High current rating ID(DC) = ±80 A
Low input capacitance Ciss = 4600 pF TYP.
Designed for automotive application and AEC-Q101 qualified
(TO-220) (TO-262) (TO-263)
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Document No. D19797EJ1V0DS00 (1st edition) Date Published May 2009 NS Printed in...