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NP82N04PDG Dataheets PDF



Part Number NP82N04PDG
Manufacturers Renesas
Logo Renesas
Description N-CHANNEL POWER MOS FET
Datasheet NP82N04PDG DatasheetNP82N04PDG Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N04PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING NP82N04PDG-E1-AY Pure Sn (Tin) NP82N04PDG-E2-AY PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) typ. 1.5 g FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 41 A.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N04PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING NP82N04PDG-E1-AY Pure Sn (Tin) NP82N04PDG-E2-AY PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) typ. 1.5 g FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low Ciss Ciss = 6000 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±82 ±328 Total Power Dissipation (TC = 25°C) PT1 143 Total Power Dissipation (TA = 25°C) PT2 1.8 Channel Temperature Tch 175 Storage Temperature Tstg −55 to +175 Repetitive Avalanche Current Note2 IAR 43 Repetitive Avalanche Energy Note2 EAR 185 Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V V V A A W W °C °C A mJ (TO-263) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 1.05 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18396EJ1V0DS00 (1st edition) Date Published September 2006 NS CP(K) Printed in Japan 2006 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA Forward Transfer Admittance | yfs | VDS = 10 V, ID = 41 A Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 41 A RDS(on)2 VGS = 4.5 V, ID = 41 A Input Capacitance Ciss VDS = 25 V Output Capacitance Coss VGS = 0 V Reverse Transfer Capacitance Crss f = 1 MHz Turn-on Delay Time td(on) VDD = 20 V, ID = 41 A Rise Time tr VGS = 10 V Turn-off Delay Time td(off) RG = 0 Ω Fall Time tf Total Gate Charge QG VDD = 32 V Gate to Source Charge QGS VGS = 10 V Gate to Drain Charge QGD ID = 82 A Body Diode Forward Voltage VF(S-D) IF = 82 A, VGS = 0 V Reverse Recovery Time trr IF = 82 A, VGS = 0 V Reverse Recovery Charge Qrr di/dt = 100 A/μs NP82N04PDG MIN. TYP. MAX. UNIT 1 μA ±100 nA 1.4 1.8 2.5 V 20 47 S 2.9 3.5 mΩ 4.1 8.0 mΩ 6000 9000 pF 580 870 pF 370 670 pF 26 60 ns 68 170 ns 73 150 ns 11 30 ns 100 150 nC 19 nC 32 nC 0.9 1.5 V 43 ns 47 nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω L VDD BVDSS ID VDD IAS VDS Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG PG. VGS 0 τ τ = 1 μs Duty Cycle ≤ 1% RL VDD VGS VGS Wave Form 10% 0 VDS 90% VDS VDS Wave Form 0 td(on) VGS 90% 90% 10% 10% tr td(off) tf ton toff 2 Data Sheet D18396EJ1V0DS NP82N04PDG dT - Percentage of Rated Power - % TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C ID - Drain Current - A FORWARD BIAS SAFE OPERATING AREA 1000 RDS(on) Limited (at VGS = 10 V) ID(Pulse) 100 μs 100 10 ID(DC) 1 ms 10 ms 1 TC = 25°C Single pulse 0.1 0.1 DC Power Dissipation Limited 1 10 VDS - Drain to Source Voltage - V 100 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 10 Rth(ch-A) = 83.3 °C/W rth(t) - Transient Thermal Resistance - °C/W 1 Rth(ch-C) = 1.05 °C/W 0.1 0.01 1m 10 m 100 m 1 10 PW - Pulse Width - s Data Sheet D18396EJ1V0DS Single pulse 100 1000 3 NP82N04PDG ID - Drain Current - A VGS(th) - Gate to Source Threshold Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 400 300 VGS = 10 V 200 4.5 V 100 Pulsed 0 0 0.5 1 1.5 2 VDS - Drain to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 2.5 2.0 1.5 1.0 0.5 VDS = VGS ID = 250 μA 0.0 -100 0 100 Tch - Channel Temperature - °C 200 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 7 Pulsed 6 5 VGS = 4.5 V 4 3 10 V 2 1 0 1 10 100 1000 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ | yfs | - Forward Transfer Admittance - S ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS 1000 100 VDS = 10 V Pulsed 10 TA = 85°C 125°C 1 150°C 175°C 0.1 0.01 −55°C −25°C 25°C 0.001 0 1234 VGS - Gate to Source Voltage - V 5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 V.


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