Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N04PDG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The NP82N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
NP82N04PDG-E1-AY
Pure Sn (Tin)
NP82N04PDG-E2-AY
PACKING
Tape 800 p/reel
PACKAGE TO-263 (MP-25ZP)
typ. 1.5 g
FEATURES • Super low on-state resistance
RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low Ciss Ciss = 6000 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC) ID(pulse)
±82 ±328
Total Power Dissipation (TC = 25°C)
PT1 143
Total Power Dissipation (TA = 25°C) PT2 1.8
Channel Temperature
Tch 175
Storage Temperature
Tstg −55 to +175
Repetitive Avalanche Current Note2
IAR 43
Repetitive Avalanche Energy Note2
EAR 185
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V
V V A A W W °C °C A mJ
(TO-263)
THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C) Rth(ch-A)
1.05 83.3
°C/W °C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D18396EJ1V0DS00 (1st edition) Date Published September 2006 NS CP(K) Printed in Japan
2006
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 40 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate to Source Threshold Voltage
VGS(th) VDS = VGS, ID = 250 μA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 41 A
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 41 A
RDS(on)2 VGS = 4.5 V, ID = 41 A
Input Capacitance
Ciss VDS = 25 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 41 A
Rise Time
tr VGS = 10 V
Turn-off Delay Time
td(off)
RG = 0 Ω
Fall Time
tf
Total Gate Charge
QG VDD = 32 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
QGD ID = 82 A
Body Diode Forward Voltage
VF(S-D) IF = 82 A, VGS = 0 V
Reverse Recovery Time
trr IF = 82 A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 100 A/μs
NP82N04PDG
MIN. TYP. MAX. UNIT
1 μA
±100 nA
1.4 1.8 2.5
V
20 47
S
2.9 3.5 mΩ
4.1 8.0 mΩ
6000 9000 pF
580 870 pF
370 670 pF
26 60 ns
68 170 ns
73 150 ns
11 30 ns
100 150 nC
19 nC
32 nC
0.9 1.5
V
43 ns
47 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 Ω
PG. VGS = 20 → 0 V
50 Ω
L VDD
BVDSS
ID VDD
IAS
VDS
Starting Tch TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA
PG. 50 Ω
RL VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG PG.
VGS 0
τ
τ = 1 μs Duty Cycle ≤ 1%
RL VDD
VGS
VGS
Wave Form
10% 0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90% 10% 10%
tr td(off) tf
ton toff
2 Data Sheet D18396EJ1V0DS
NP82N04PDG
dT - Percentage of Rated Power - %
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
100
80
60
40
20
0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C
PT - Total Power Dissipation - W
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 160 140
120 100
80 60 40 20
0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C
ID - Drain Current - A
FORWARD BIAS SAFE OPERATING AREA
1000
RDS(on) Limited (at VGS = 10 V)
ID(Pulse)
100 μs
100 10
ID(DC)
1 ms 10 ms
1
TC = 25°C Single pulse
0.1 0.1
DC Power Dissipation Limited
1 10
VDS - Drain to Source Voltage - V
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100
10 Rth(ch-A) = 83.3 °C/W
rth(t) - Transient Thermal Resistance - °C/W
1 Rth(ch-C) = 1.05 °C/W
0.1
0.01 1m
10 m
100 m
1
10
PW - Pulse Width - s
Data Sheet D18396EJ1V0DS
Single pulse 100 1000
3
NP82N04PDG
ID - Drain Current - A
VGS(th) - Gate to Source Threshold Voltage - V
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
400
300 VGS = 10 V
200 4.5 V
100
Pulsed 0
0 0.5 1 1.5 2 VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 2.5
2.0
1.5
1.0
0.5 VDS = VGS
ID = 250 μA 0.0
-100
0
100
Tch - Channel Temperature - °C
200
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 7
Pulsed 6
5 VGS = 4.5 V
4
3 10 V
2
1
0 1 10 100 1000 ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
| yfs | - Forward Transfer Admittance - S
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000 100
VDS = 10 V Pulsed
10 TA = 85°C 125°C
1 150°C 175°C
0.1
0.01
−55°C −25°C 25°C
0.001 0
1234 VGS - Gate to Source Voltage - V
5
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
100 V.