FDMS3008SDC N-Channel Dual CoolTM 56 PowerTrench® SyncFETTM
July 2015
FDMS3008SDC
N-Channel Dual CoolTM 56 PowerTrench...
FDMS3008SDC N-Channel Dual CoolTM 56 PowerTrench® SyncFETTM
July 2015
FDMS3008SDC
N-Channel Dual CoolTM 56 PowerTrench® SyncFETTM
30 V, 65 A, 2.6 mΩ
Features
General Description
Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 28 A Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 22 A High performance technology for extremely low rDS(on) SyncFET
Schottky Body Diode RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic
Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side
Pin 1
S S S G
S S
D D
D D D D
Top
Dual CoolTM 56
Bottom
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS
ID
EAS dv/dt PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed
TC = 25 °C TC = 25 °C TA = 25 °C
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal ...