KF7N60F

SEMICONDUCTOR TECHNICAL DATA KF7N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=7A Drain-Source ON Resistance : RDS(ON)(Max)=1.2 @VGS=10V Qg(typ.)= 19nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF7N60P KF7N60F Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt 7 7* 4 4* 20 20* 210 11 4.5 Drain Power Dissipation Tc=25 Derate above 25 PD 108 0.87 44.6 0.36 Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 1.15 Thermal Resistance, Junction-to-Ambient RthJA 62.5 * : Drain current limited by maximum junction temperature. 2.8 62.5 UNIT V V A mJ mJ V/ns W W/ /W /W www.ckb-sh.com K Q KF7N60P A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A 9.9 +_ 0.2 B 15.95 MAX C 1.3+0.1/-0.05 D 0.8 +_ 0.1 E 3.6 +_ 0.2 F 2.8 +_ 0.1 G 3.7 H 0.5+0.1/-0.05 I 1.5 J 13.08 +_ 0.3 K 1.46 L 1.4 +_ 0.1 M 1.27 +_ 0.1 N 2.54 +_ 0.2 O 4.5 +_ 0.2 P 2.4 +_ 0.2 Q 9.2 +...