ZXTP25012EZTA

ZXTP25012EZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -12V hFE > 500 IC(cont) = 4.5A VCE(sat) < -70mV @ 1A RCE(sat) = 45m⍀ PD = 2.4W Complementary part number ZXTN25012EZ Description Packaged in the SOT89 outline this new low saturation 12V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Features 4.5A continuous current Up to 10A peak current Very low saturation voltages High gain B C E Applications High side switch Battery charging Regulator circuits Buck converters MOSFET gate drivers Ordering information Device ZXTP25012EZTA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1000 E CC B Pinout - top view Device marking 1L4 Issue 1- December 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXTP25012EZ Absolute maximum ratings Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Continuous Collector current(c) Base current Peak pulse current Power dissipation at TA =25°C(a) Linear derating factor Power dissipation at TA =25°C(b) Linear derating factor Power dissipation at TA =25°C(c) Linear derating factor Power dissipation at TA =25°C(d) Linear derating factor Power dissipation at TA =25°C(d) Linear derating factor Operating and storage temperature range Symbol VCBO VCEO VEBO IC IB ICM PD PD PD PD PD Tj, Tstg Limit -20 -12 -7 -4.5 -1 -10 1.1 8.8 1.8 14.4 2.4 19.2 4.46 35.7 19.2 153 -55 to 1...