ZXTP25012EZ 20V PNP high gain transistor in SOT89
Summary
BVCEO > -12V hFE > 500 IC(cont) = 4.5A VCE(sat) < -70mV @ 1A ...
ZXTP25012EZ 20V
PNP high gain
transistor in SOT89
Summary
BVCEO > -12V hFE > 500 IC(cont) = 4.5A VCE(sat) < -70mV @ 1A RCE(sat) = 45m⍀ PD = 2.4W Complementary part number ZXTN25012EZ
Description
Packaged in the SOT89 outline this new low saturation 12V
PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
Features
4.5A continuous current Up to 10A peak current Very low saturation voltages High gain
B
C E
Applications
High side switch Battery charging
Regulator circuits Buck converters MOSFET gate drivers
Ordering information
Device ZXTP25012EZTA
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1000
E CC
B Pinout - top view
Device marking
1L4
Issue 1- December 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
ZXTP25012EZ
Absolute maximum ratings
Parameter Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Continuous Collector current(c) Base current
Peak pulse current
Power dissipation at TA =25°C(a) Linear derating factor Power dissipation at TA =25°C(b) Linear derating factor Power dissipation at TA =25°C(c) Linear derating factor Power dissipation at TA =25°C(d) Linear derating factor Power dissipation at TA =25°C(d) Linear derating factor Operating and storage temperature range
Symbol VCBO VCEO VEBO IC IB ICM PD
PD
PD
PD
PD
Tj, Tstg
Limit -20 -12 -7 -4.5 -1 -10 1.1 8.8 1.8 14.4 2.4 19.2 4.46 35.7 19.2 153
-55 to 1...