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ZXTP25040DZ Dataheets PDF



Part Number ZXTP25040DZ
Manufacturers Zetex Semiconductors
Logo Zetex Semiconductors
Description 40V PNP medium power transistor
Datasheet ZXTP25040DZ DatasheetZXTP25040DZ Datasheet (PDF)

ZXTP25040DZ 40V PNP medium power transistor in SOT89 Summary BVCEO > -40V BVECO > -3V IC(cont) = -3.5A RCE(sat) = 55m⍀ VCE(sat) < -90mV @ 1A PD = 2.4W Complementary part number ZXTN25040DZ Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. B Features • High power dissipation SOT8.

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ZXTP25040DZ 40V PNP medium power transistor in SOT89 Summary BVCEO > -40V BVECO > -3V IC(cont) = -3.5A RCE(sat) = 55m⍀ VCE(sat) < -90mV @ 1A PD = 2.4W Complementary part number ZXTN25040DZ Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. B Features • High power dissipation SOT89 package • High peak current • Low saturation voltage • 3V reverse blocking voltage Applications • MOSFET and IGBT gate driving • DC - DC converters • Motor drive • High side driver C C E E C B Ordering information Device ZXTP25040DZTA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1000 Pinout - top view Device marking • 1L6 Issue 1 - December 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXTP25040DZ Absolute maximum ratings Parameter Collector-Base voltage Collector-Emitter voltage (forward blocking) Emitter-Collector voltage (reverse blocking) Emitter-Base voltage Continuous Collector current(c) Base current Peak pulse current Power dissipation at TA =25°C(a) Linear derating factor Power dissipation at TA =25°C(b) Linear derating factor Power dissipation at TA =25°C(c) Linear derating factor Power dissipation at TA =25°C(d) Linear derating factor Power dissipation at TC =25°C(e) Linear derating factor Operating and storage temperature range Symbol VCBO VCEO VECO VEBO IC IB ICM PD PD PD PD PD Tj, Tstg Limit -45 -40 -3 -7 -3 -1 -9 1.1 8.8 1.8 14.4 2.4 19.2 4.46 35.7 15.7 126 -55 to 150 Unit V V V V A A A W mW/°C W mW/°C W mW/°C W mW/°C W mW/°C °C Thermal resistance Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d) Junction to case(e) Symbol R⍜JA R⍜JA R⍜JA R⍜JA R⍜JC Limit 117 68 51 28 7.95 Unit °C/W °C/W °C/W °C/W °C/W NOTES: (a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t<5 seconds. (e) Junction to case (collector tab). Typical Issue 1 - December 2007 © Zetex Semiconductors plc 2007 2 www.zetex.com Thermal characteristics ZXTP25040DZ Issue 1 - December 2007 © Zetex Semiconductors plc 2007 3 www.zetex.com Thermal characteristics ZXTP25040DZ Issue 1 - December 2007 © Zetex Semiconductors plc 2007 4 www.zetex.com ZXTP25040DZ Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage (base open) Emitter-Collector breakdown voltage (reverse blocking) Emitter-Base breakdown voltage Collector cut-off current Symbol BVCBO BVCEO BVECO BVEBO ICBO Min. -45 -40 -3 -7 Emitter cut-off current Collector-Emitter saturation voltage IEBO VCE(sat) Base-Emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio Transition frequency VBE(sat) VBE(on) hFE fT 300 200 20 Input capacitance Output capacitance Turn-on time Turn-off time Cibo Cobo t(on) t(off) Typ. -75 -65 Max. Unit Conditions V IC = -100μA V IC= -10mA (*) -8.7 V IE = -100μA -8.2 V IE = -100μA <-1 <-1 -170 -70 -215 -970 -50 -0.5 -50 -265 -90 -350 -1050 nA VCB = -45V μA VCB = -45V, Tamb=100°C nA VEB = -5.6V mV IC = -1A, IB = -20mA(*) mV IC = -1A, IB = -100mA(*) mV IC = -3.5A, IB = -350mA(*) mV IC = -3.5A, IB = -350mA(*) -870 -950 mV IC = -3.5A, VCE = -2V(*) 450 900 300 50 IC = -10mA, VCE = -2V(*) IC = -1A, VCE = -2V(*) IC = -3.5A, VCE = -2V(*) 270 MHz IC = -50mA, VCE = -10V f = 100MHz 142 17.4 75.5 320 pF VEB = -0.5V, f = 1MHz(*) pF VCB = -10V, f = 1MHz(*) ns VCC= -15V, IC = -750mA, ns IB1 = -IB2 = -15mA, NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%. Issue 1 - December 2007 © Zetex Semiconductors plc 2007 5 www.zetex.com Typical characteristics ZXTP25040DZ Issue 1 - December 2007 © Zetex Semiconductors plc 2007 6 www.zetex.com Package outline - SOT89 D D1 A C ZXTP25040DZ H E E1 L B B1 e e1 DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max A 1.40 1.60 0.550 0.630 E 2.29 2.60 0.090 0.102 B 0.44 0.56 0.017 0.022 E1 2.13 2.29 0.084 0.090 B1 0.36 0.48 0.014 0.019 e 1.50 BSC 0.059 BSC C 0.35 0.44 0.014 0.017 e1 3.00 BSC 0.118 BSC D 4.40 4.60 0.173 0.181 H 3.94 4.25 0.155 0.167 D1 1.52 1.83 0.064 0.072 L 0.89 1.20 0.035 0.047 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 1 - December 2007 © Zetex Semiconductors plc 2007 7 www.zetex.com ZXTP25040DZ Definitions Product change Zetex Semiconductors reserves the right to alter, witho.


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