Document
ZXTP25040DZ 40V PNP medium power transistor in SOT89
Summary
BVCEO > -40V BVECO > -3V IC(cont) = -3.5A RCE(sat) = 55m⍀ VCE(sat) < -90mV @ 1A PD = 2.4W Complementary part number ZXTN25040DZ
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
B
Features
• High power dissipation SOT89 package • High peak current • Low saturation voltage • 3V reverse blocking voltage
Applications
• MOSFET and IGBT gate driving • DC - DC converters • Motor drive • High side driver
C
C
E
E C B
Ordering information
Device ZXTP25040DZTA
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1000
Pinout - top view
Device marking
• 1L6
Issue 1 - December 2007
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ZXTP25040DZ
Absolute maximum ratings
Parameter Collector-Base voltage
Collector-Emitter voltage (forward blocking)
Emitter-Collector voltage (reverse blocking)
Emitter-Base voltage
Continuous Collector current(c) Base current
Peak pulse current
Power dissipation at TA =25°C(a) Linear derating factor Power dissipation at TA =25°C(b) Linear derating factor Power dissipation at TA =25°C(c) Linear derating factor Power dissipation at TA =25°C(d) Linear derating factor Power dissipation at TC =25°C(e) Linear derating factor Operating and storage temperature range
Symbol VCBO VCEO VECO VEBO IC IB ICM PD
PD
PD
PD
PD
Tj, Tstg
Limit -45 -40 -3 -7 -3 -1 -9 1.1 8.8 1.8 14.4 2.4 19.2 4.46 35.7 15.7 126
-55 to 150
Unit V V V V A A A W
mW/°C W
mW/°C W
mW/°C W
mW/°C W
mW/°C °C
Thermal resistance
Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d) Junction to case(e)
Symbol R⍜JA R⍜JA R⍜JA R⍜JA R⍜JC
Limit 117 68 51 28 7.95
Unit °C/W °C/W °C/W °C/W °C/W
NOTES: (a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions. (b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t<5 seconds. (e) Junction to case (collector tab). Typical
Issue 1 - December 2007
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Thermal characteristics
ZXTP25040DZ
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Thermal characteristics
ZXTP25040DZ
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ZXTP25040DZ
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage (base open)
Emitter-Collector breakdown voltage (reverse blocking)
Emitter-Base breakdown voltage
Collector cut-off current
Symbol BVCBO BVCEO
BVECO
BVEBO ICBO
Min. -45 -40
-3
-7
Emitter cut-off current
Collector-Emitter saturation voltage
IEBO VCE(sat)
Base-Emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio
Transition frequency
VBE(sat) VBE(on) hFE
fT
300 200 20
Input capacitance Output capacitance Turn-on time Turn-off time
Cibo Cobo t(on) t(off)
Typ. -75
-65
Max.
Unit Conditions V IC = -100μA
V IC= -10mA (*)
-8.7 V IE = -100μA
-8.2 V IE = -100μA
<-1
<-1 -170 -70 -215 -970
-50 -0.5 -50 -265 -90 -350
-1050
nA VCB = -45V μA VCB = -45V, Tamb=100°C
nA VEB = -5.6V
mV IC = -1A, IB = -20mA(*) mV IC = -1A, IB = -100mA(*) mV IC = -3.5A, IB = -350mA(*)
mV IC = -3.5A, IB = -350mA(*)
-870 -950 mV IC = -3.5A, VCE = -2V(*)
450 900 300 50
IC = -10mA, VCE = -2V(*) IC = -1A, VCE = -2V(*) IC = -3.5A, VCE = -2V(*)
270 MHz IC = -50mA, VCE = -10V f = 100MHz
142 17.4 75.5 320
pF VEB = -0.5V, f = 1MHz(*) pF VCB = -10V, f = 1MHz(*) ns VCC= -15V, IC = -750mA, ns IB1 = -IB2 = -15mA,
NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
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Typical characteristics
ZXTP25040DZ
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Package outline - SOT89
D D1
A C
ZXTP25040DZ
H E E1
L B
B1
e e1
DIM Millimeters
Inches
DIM Millimeters
Inches
Min Max Min Max
Min Max Min Max
A
1.40 1.60 0.550 0.630
E
2.29 2.60 0.090 0.102
B
0.44 0.56 0.017 0.022 E1
2.13 2.29 0.084 0.090
B1 0.36 0.48 0.014 0.019 e
1.50 BSC
0.059 BSC
C 0.35 0.44 0.014 0.017 e1
3.00 BSC
0.118 BSC
D
4.40 4.60 0.173 0.181
H
3.94 4.25 0.155 0.167
D1 1.52 1.83 0.064 0.072 L
0.89 1.20 0.035 0.047
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTP25040DZ
Definitions
Product change
Zetex Semiconductors reserves the right to alter, witho.