ZXTP25040DZTA

ZXTP25040DZ 40V PNP medium power transistor in SOT89 Summary BVCEO > -40V BVECO > -3V IC(cont) = -3.5A RCE(sat) = 55m⍀ VCE(sat) < -90mV @ 1A PD = 2.4W Complementary part number ZXTN25040DZ Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. B Features High power dissipation SOT89 package High peak current Low saturation voltage 3V reverse blocking voltage Applications MOSFET and IGBT gate driving DC - DC converters Motor drive High side driver C C E E C B Ordering information Device ZXTP25040DZTA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1000 Pinout - top view Device marking 1L6 Issue 1 - December 2007 © Zetex Semiconductors plc 2007 1 www.zetex.com ZXTP25040DZ Absolute maximum ratings Parameter Collector-Base voltage Collector-Emitter voltage (forward blocking) Emitter-Collector voltage (reverse blocking) Emitter-Base voltage Continuous Collector current(c) Base current Peak pulse current Power dissipation at TA =25°C(a) Linear derating factor Power dissipation at TA =25°C(b) Linear derating factor Power dissipation at TA =25°C(c) Linear derating factor Power dissipation at TA =25°C(d) Linear derating factor Power dissipation at TC =25°C(e) Linear derating factor Operating and storage temperature range Symbol V...