DATA SHEET
MOS FIELD EFFECT TRANSISTOR NP80N055MDG, NP80N055NDG, NP80N055PDG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPT...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR NP80N055MDG, NP80N055NDG, NP80N055PDG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect
Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP80N055MDG-S18-AY Note NP80N055NDG-S18-AY Note NP80N055PDG-E1B-AY Note NP80N055PDG-E2B-AY Note
LEAD PLATING Pure Sn (Tin)
PACKING Tube
50 p/tube
Tape 1000 p/reel
Note Pb-free (This product does not contain Pb in the external electrode.)
PACKAGE TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g
TO-263 (MP-25ZP) typ. 1.5 g
FEATURES Logic level Super low on-state resistance
- NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 11.2 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
- NP80N055PDG RDS(on)1 = 6.6 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 10.9 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
High current rating ID(DC) = ±80 A
Low input capacitance Ciss = 4600 pF TYP.
Designed for automotive application and AEC-Q101 qualified
(TO-220) (TO-262) (TO-263)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D19796EJ1V0DS00 (1st edition) Date Published May 2009 NS Printed in Japan
2009
NP80...