RJK2555DPA

RJK2555DPA Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance Low drive current High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 4 32 1 4 G 5 678 D DDD REJ03G1776-0200 Rev.2.00 Apr 09, 2009 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 250 ±30 17 34 17 34 7 3.0 30 4.17 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C REJ03G1776-0200 Rev.2.00 Apr 09, 2009 Page 1 of 6 RJK2555DPA Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS IDS...