LESHAN RADIO COMPANY, LTD.
Dual Bias ResistorTransistors
NPN Silicon Surface Mount Transistors with Monolithic Bias Res...
LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount
Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor
Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital
transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the LMUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium.
Simplifies Circuit Design Reduces Board Space Reduces Component Count We declare that the material of product compliance with RoHS requirements.
LMUN5211DW1T1G Series
6 5
4
1 2
3
SC-88/SOT-363
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating
Symbol Value Unit
Collector-Base Voltage
V CBO 50 Vdc
Collector-Emitter Voltage
V CEO 50 Vdc
Collector Current
I C 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation T A = 25°C
Derate above 25°C
P D 187 (Note 1.) mW 256 (Note 2.) 1.5 (Note 1.) mW/°C 2.0 (Note 2.)
Thermal Resistance –
R θJA
670 (Note 1.) °C/W
Junction-to-Ambient
490 (Note 2.)
Characteristic (Both Junctions Heated)
Symbol
Max
Total Device Dissipation T A = 25°C Derate above 25°C
T...