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LESHAN RADIO COMPANY, LTD.
Dual Bias ResistorTransistors
NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the LMUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • We declare that the material of product compliance with RoHS requirements.
LMUN5211DW1T1G Series
6 5
4
1 2
3
SC-88/SOT-363
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating
Symbol Value Unit
Collector-Base Voltage
V CBO 50 Vdc
Collector-Emitter Voltage
V CEO 50 Vdc
Collector Current
I C 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation T A = 25°C
Derate above 25°C
P D 187 (Note 1.) mW 256 (Note 2.) 1.5 (Note 1.) mW/°C 2.0 (Note 2.)
Thermal Resistance –
R θJA
670 (Note 1.) °C/W
Junction-to-Ambient
490 (Note 2.)
Characteristic (Both Junctions Heated)
Symbol
Max
Total Device Dissipation T A = 25°C Derate above 25°C
Thermal Resistance – Junction-to-Ambient
Thermal Resistance – Junction-to-Lead
PD
R θJA R θJL
250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) 493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.)
Junction and Storage Temperature
T J , T stg
–55 to +150
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
Unit mW mW/°C °C/W °C/W
°C
6 54
Q2 R1 R2
R2 R1
Q1
12
3
MARKING DIAGRAM
6 54
7X
1 23
7X = Device Marking = (See Page 2)
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page 2 of this data sheet.
Rev.O 1/10
LESHAN RADIO COMPANY, LTD.
LMUN5211DW1T1G Series
DEVICE MARKING , RESISTOR VALUES AND ORDERING INFORMATION
Device
Package
Marking
R1(K)
R2(K)
LMUN5211DW1T1G
SOT-363
7A
10 10
LMUN5211DW1T3G
SOT-363
7A
10 10
LMUN5212DW1T1G
SOT-363
7B
22 22
LMUN5212DW1T3G LMUN5213DW1T1G
SOT-363 SOT-363
7B 7C
22 22 47 47
LMUN5213DW1T3G
SOT-363
7C
47 47
LMUN5214DW1T1G
SOT-363
7D
10 47
LMUN5214DW1T3G LMUN5215DW1T1G LMUN5215DW1T3G LMUN5216DW1T1G LMUN5216DW1T3G LMUN5230DW1T1G
SOT-363 SOT-363 SOT-363 SOT-363 SOT-363 SOT-363
7D 7E 7E 7F 7F 7G
10 47 10 Ğ 10 Ğ 4.7 Ğ 4.7 Ğ 11
LMUN5230DW1T3G LMUN5231DW1T1G
SOT-363 SOT-363
7G 7H
11 2.2 2.2
LMUN5231DW1T3G LMUN5232DW1T1G
SOT-363 SOT-363
7H 7J
2.2 2.2 4.7 4.7
LMUN5232DW1T3G LMUN5233DW1T1G
SOT-363 SOT-363
7J 7K
4.7 4.7 4.7 47
LMUN5233DW1T3G
SOT-363
7K
4.7 47
LMUN5234DW1T1G
SOT-363
7L
22 47
LMUN5234DW1T3G
SOT-363
7L
22 47
LMUN5235DW1T1G
SOT-363
7M
2.2 47
LMUN5235DW1T3G LMUN5236DW1T1G
SOT-363 SOT-363
7M 7N
2.2 47 100 100
LMUN5236DW1T3G
SOT-363
7N
100 100
LMUN5237DW1T1G
SOT-363
7P
47 22
LMUN5237DW1T3G
SOT-363
7P
47 22
Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel
Rev.O 2/10
LESHAN RADIO COMPANY, LTD. LMUN5211DW1T1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0)
MUN5211DW1T1, G MUN5212DW1T1, G MUN5213DW1T1, G MUN5214DW1T1, G MUN5215DW1T1, G MUN5216DW1T1, G MUN5230DW1T1, G MUN5231DW1T1, G MUN5232DW1T1, G MUN5233DW1T1, G MUN5234DW1T1, G MUN5235DW1T1, G MUN5236DW1T1, G MUN5237DW1T1, G
ICBO ICEO IEBO
−
−
− − − − − − − − − − − − − −
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ON CHARACTERISTICS (Note 4)
DC Current Gain (VCE = 10 V, IC = 5.0 mA)
MUN5211DW1T1, G MUN5212DW1T1, G MUN5213DW1T1, G MUN5214DW1T1, G MUN5215DW1T1, G MUN5216DW1T1, G MUN5230DW1T1, G MUN5231DW1T1, G MUN5232DW1T1, G MUN5233DW1T1, G MUN5234DW1T1, G MUN5235DW1T1, G MUN5236DW1T1, G MUN5237DW1T1, G
V(BR)CBO V(BR)CEO
50 50
hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80
Typ
−
−
− − − − − − − − − − − − − −
−
−
60 100 140 140 350 350 5.0 15 30 200 150 140 150 140
Max Unit
100 nAdc
500 nAdc
0.5 mAdc 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0..