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MBR5H100MFST3G

ON Semiconductor

SWITCHMODE Power Rectifiers

MBR5H100MFS, NRVB5H100MFS SWITCHMODE Power Rectifiers These state−of−the−art devices have the following features: Feat...


ON Semiconductor

MBR5H100MFST3G

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Description
MBR5H100MFS, NRVB5H100MFS SWITCHMODE Power Rectifiers These state−of−the−art devices have the following features: Features Low Power Loss / High Efficiency New Package Provides Capability of Inspection and Probe After Board Mounting Guardring for Stress Protection Low Forward Voltage Drop 175°C Operating Junction Temperature NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices Mechanical Characteristics: Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR 100 Average Rectified Forward Current IF(AV) 5 A (Rated VR, TC = 150°C) Peak Repetitive Forward Current, IFRM 10 A (Rated VR, Square Wave, 20 kHz, TC = 150°C) Non−Repetitive Peak Surge Current IFSM 200 A (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range Operating Junction Temperature Voltage Rate of Change (Rated VR) Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) Tstg TJ dv/dt EAS −65 to +175 −55 to +175 10,000 °C °C V/ms 100 mJ ESD Rating (Human Body Model) 3B ESD Rating (Mach...




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