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MBR8H100MFST1G

ON Semiconductor

SWITCHMODE Power Rectifiers

MBR8H100MFS, NRVB8H100MFS Switch Mode Power Rectifiers Features • Low Power Loss / High Efficiency • New Package Provid...


ON Semiconductor

MBR8H100MFST1G

File Download Download MBR8H100MFST1G Datasheet


Description
MBR8H100MFS, NRVB8H100MFS Switch Mode Power Rectifiers Features Low Power Loss / High Efficiency New Package Provides Capability of Inspection and Probe After Board Mounting Guardring for Stress Protection Low Forward Voltage Drop 175°C Operating Junction Temperature WF Suffix for Products with Wettable Flanks NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices Mechanical Characteristics: Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 165°C) Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 162°C) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range Operating Junction Temperature Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) VRRM VRWM VR IF(AV) IFRM IFSM 100 8.0 16 75 V A A A Tstg −65 to +175 °C TJ −55 to +175 °C EAS 75 mJ ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the...




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