Document
MBR8H100MFS, NRVB8H100MFS
Switch Mode Power Rectifiers
Features
• Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After
Board Mounting
• Guardring for Stress Protection • Low Forward Voltage Drop • 175°C Operating Junction Temperature • WF Suffix for Products with Wettable Flanks • NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These are Pb−Free Devices
Mechanical Characteristics:
• Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. • Lead Finish: 100% Matte Sn (Tin) • Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current (Rated VR, TC = 165°C)
Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 162°C)
Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
VRRM VRWM
VR IF(AV)
IFRM
IFSM
100 8.0 16
75
V A A A
Tstg −65 to +175 °C TJ −55 to +175 °C EAS 75 mJ
ESD Rating (Human Body Model)
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA
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SCHOTTKY BARRIER RECTIFIERS 8 AMPERES 100 VOLTS
1,2,3
5,6
MARKING DIAGRAM
A
1
SO−8 FLAT LEAD CASE 488AA STYLE 2
A A Not Used
B8H100 AYWZZ
B8H100 = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability
C C
ORDERING INFORMATION
Device
Package Shipping†
MBR8H100MFST1G
SO−8 FL 1500 / (Pb−Free) Tape & Reel
MBR8H100MFST3G NRVB8H100MFST1G
SO−8 FL 5000 / (Pb−Free) Tape & Reel
SO−8 FL 1500 / (Pb−Free) Tape & Reel
NRVB8H100MFST3G
SO−8 FL 5000 / (Pb−Free) Tape & Reel
NRVB8H100MFSWFT1G SO−8 FL 1500 / (Pb−Free) Tape & Reel
NRVB8H100MFSWFT3G SO−8 FL 5000 / (Pb−Free) Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
August, 2015 − Rev. 2
1
Publication Order Number: MBR8H100MFS/D
MBR8H100MFS, NRVB8H100MFS
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1) (iF = 8 Amps, TJ = 125°C) (iF = 8 Amps, TJ = 25°C)
Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Symbol RθJC
Typ −
vF 0.68 0.81
iR 180 0.06
Max Unit 2.2 °C/W
V 0.76 0.90
mA 300
2
iF, INSTANTANEOUS FORWARD CURRENT (A)
TYPICAL CHARACTERISTICS
100 100
iF, INSTANTANEOUS FORWARD CURRENT (A)
10 10
TA = 175°C 1
150°C
0.1 0
125°C
25°C
−40°C
0.2 0.4 0.6 0.8 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward Characteristics
1.2
TA = 175°C
150°C 1
125°C
0.1 0
25°C
−40°C
0.2 0.4 0.6 0.8 1.0 1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward Characteristics
IR, INSTANTANEOUS REVERSE CURRENT (A)
1.E+00
1.E+00
1.E−01
1.E−01
1.E−02 1.E−03 1.E−04 1.E−05 1.E−06 1.E−07 1.E−08 1.E−09
TA = 175°C TA = 150°C TA = 125°C
TA = 25°C
1.E−02 1.E−03 1.E−04 1.E−05 1.E−06 1.E−07 1.E−08
TA = 175°C TA = 150°C TA = 125°C
TA = 25°C
1.E−10 1.E−11
TA = −40°C
1.E−09 1.E−10
TA = −40°C
1.E−12
1.E−11
0 10 20 30 40 50 60 70 80 90 100
0 10 20 30 40 50 60 70 80 90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
IR, INSTANTANEOUS REVERSE CURRENT (A)
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C, JUNCTION CAPACITANCE (pF) PF(AV), AVERAGE FORWARD POW-
ER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A)
MBR8H100MFS, NRVB8H100MFS
TYPICAL CHARACTERISTICS
1,000 100
TJ = 25°C
10 0 10 20 30 40 50 60 70 80 90 100
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
20 18 16
14 12 10
8 6 4 2 0
60
dc Square Wave
RqJC = 2.2°C/W
80 100 120 140 TC, CASE TEMPERATURE (°C) Figure 6. Current Derating
160
8 IPK/IAV = 20
7 IPK/IAV = 10
6
5
TJ = 175°C IPK/IAV = 5
4
3 Square Wave 2
dc 1
0 0123 4
IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation
100 50% Duty Cycle 20%
10 10% 5% 2%
1 1%
0.1
Single Pulse 0.01
0.001 0.000001 0.00001
0.0001
Assumes 25°C ambient .