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NRVB8H100MFSWFT3G Dataheets PDF



Part Number NRVB8H100MFSWFT3G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description SWITCHMODE Power Rectifiers
Datasheet NRVB8H100MFSWFT3G DatasheetNRVB8H100MFSWFT3G Datasheet (PDF)

MBR8H100MFS, NRVB8H100MFS Switch Mode Power Rectifiers Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage Drop • 175°C Operating Junction Temperature • WF Suffix for Products with Wettable Flanks • NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free Devices Mech.

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MBR8H100MFS, NRVB8H100MFS Switch Mode Power Rectifiers Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage Drop • 175°C Operating Junction Temperature • WF Suffix for Products with Wettable Flanks • NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free Devices Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. • Lead Finish: 100% Matte Sn (Tin) • Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 165°C) Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 162°C) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range Operating Junction Temperature Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) VRRM VRWM VR IF(AV) IFRM IFSM 100 8.0 16 75 V A A A Tstg −65 to +175 °C TJ −55 to +175 °C EAS 75 mJ ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA www.onsemi.com SCHOTTKY BARRIER RECTIFIERS 8 AMPERES 100 VOLTS 1,2,3 5,6 MARKING DIAGRAM A 1 SO−8 FLAT LEAD CASE 488AA STYLE 2 A A Not Used B8H100 AYWZZ B8H100 = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability C C ORDERING INFORMATION Device Package Shipping† MBR8H100MFST1G SO−8 FL 1500 / (Pb−Free) Tape & Reel MBR8H100MFST3G NRVB8H100MFST1G SO−8 FL 5000 / (Pb−Free) Tape & Reel SO−8 FL 1500 / (Pb−Free) Tape & Reel NRVB8H100MFST3G SO−8 FL 5000 / (Pb−Free) Tape & Reel NRVB8H100MFSWFT1G SO−8 FL 1500 / (Pb−Free) Tape & Reel NRVB8H100MFSWFT3G SO−8 FL 5000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 August, 2015 − Rev. 2 1 Publication Order Number: MBR8H100MFS/D MBR8H100MFS, NRVB8H100MFS THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) (iF = 8 Amps, TJ = 125°C) (iF = 8 Amps, TJ = 25°C) Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. Symbol RθJC Typ − vF 0.68 0.81 iR 180 0.06 Max Unit 2.2 °C/W V 0.76 0.90 mA 300 2 iF, INSTANTANEOUS FORWARD CURRENT (A) TYPICAL CHARACTERISTICS 100 100 iF, INSTANTANEOUS FORWARD CURRENT (A) 10 10 TA = 175°C 1 150°C 0.1 0 125°C 25°C −40°C 0.2 0.4 0.6 0.8 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics 1.2 TA = 175°C 150°C 1 125°C 0.1 0 25°C −40°C 0.2 0.4 0.6 0.8 1.0 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 2. Maximum Instantaneous Forward Characteristics IR, INSTANTANEOUS REVERSE CURRENT (A) 1.E+00 1.E+00 1.E−01 1.E−01 1.E−02 1.E−03 1.E−04 1.E−05 1.E−06 1.E−07 1.E−08 1.E−09 TA = 175°C TA = 150°C TA = 125°C TA = 25°C 1.E−02 1.E−03 1.E−04 1.E−05 1.E−06 1.E−07 1.E−08 TA = 175°C TA = 150°C TA = 125°C TA = 25°C 1.E−10 1.E−11 TA = −40°C 1.E−09 1.E−10 TA = −40°C 1.E−12 1.E−11 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics IR, INSTANTANEOUS REVERSE CURRENT (A) www.onsemi.com 2 C, JUNCTION CAPACITANCE (pF) PF(AV), AVERAGE FORWARD POW- ER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) MBR8H100MFS, NRVB8H100MFS TYPICAL CHARACTERISTICS 1,000 100 TJ = 25°C 10 0 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (V) Figure 5. Typical Junction Capacitance 20 18 16 14 12 10 8 6 4 2 0 60 dc Square Wave RqJC = 2.2°C/W 80 100 120 140 TC, CASE TEMPERATURE (°C) Figure 6. Current Derating 160 8 IPK/IAV = 20 7 IPK/IAV = 10 6 5 TJ = 175°C IPK/IAV = 5 4 3 Square Wave 2 dc 1 0 0123 4 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation 100 50% Duty Cycle 20% 10 10% 5% 2% 1 1% 0.1 Single Pulse 0.01 0.001 0.000001 0.00001 0.0001 Assumes 25°C ambient .


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