Document
MBR2045EMFS, NRVB2045EMFS
Switch-mode Power Rectifiers
These state−of−the−art devices have the following features:
Features
• Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After
Board Mounting
• Guardring for Stress Protection • Low Forward Voltage Drop • 150°C Operating Junction Temperature • Wettable Flacks Option Available • NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Mechanical Characteristics:
• Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. • Lead Finish: 100% Matte Sn (Tin) • Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
Applications
• Excellent Alternative to DPAK in Space−Constrained Automotive
Applications
• Output Rectification in Compact Portable Consumer Applications • Freewheeling Diode used with Inductive Loads
http://onsemi.com
SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 45 VOLTS
1,2,3
5,6
MARKING DIAGRAM
1
SO−8 FLAT LEAD CASE 488AA STYLE 2
A
A A Not Used
B2045E AYWZZ
C C
B2045E A Y W ZZ
= Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability
ORDERING INFORMATION
Device
Package Shipping†
MBR2045EMFST1G SO−8 FL
1500 /
(Pb−Free) Tape & Reel
MBR2045EMFST3G NRVB2045EMFST1G
SO−8 FL (Pb−Free)
SO−8 FL (Pb−Free)
5000 / Tape & Reel
1500 / Tape & Reel
NRVB2045EMFST3G SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 1
1
Publication Order Number: MBR2045EMFS/D
MBR2045EMFS, NRVB2045EMFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current (Rated VR, TC = 130°C)
Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 120°C)
Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM VRWM
VR IF(AV)
IFRM
IFSM
V 45 20 A
40 A
400 A
Storage Temperature Range Operating Junction Temperature Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) ESD Rating (Human Body Model)
Tstg TJ EAS
−65 to +175 −55 to +150
150 3B
°C °C mJ
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max Unit
Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
RθJC
−
1.6 °C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 10 A, TJ = 125°C) (iF = 10 A, TJ = 25°C) (iF = 20 A, TJ = 125°C) (iF = 20 A, TJ = 25°C)
vF V 0.35 0.47 0.45 0.56 0.43 0.58 0.51 0.64
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C)
iR mA 48 100
0.09 0.40
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
http://onsemi.com 2
100.00
MBR2045EMFS, NRVB2045EMFS
TYPICAL CHARACTERISTICS
100.00
IF, INSTANTANEOUS FORWARD CURRENT (A)
IF, INSTANTANEOUS FORWARD CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
10.00
TA = 150°C
10.00
TA = 150°C
125°C 1.00
25°C
−40°C
0.10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward
Voltage
1.00 125°C
25°C
−40°C
0.10 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.800.90
VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 2. Maximum Instantaneous Forward
Voltage
IR, INSTANTANEOUS REVERSE CURRENT (A)
1.E+00 1.E−01 1.E−02 1.E−03 1.E−04 1.E−05 1.E−06 1.E−07 1.E−08 1.E−09 1.E−10
0
TA = 150°C TA = 125°C TA = 25°C
TA = −40°C
10 20 30 40
VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics
1.E+00 1.E−01
TA = 150°C
1.E−02 1.E−03
TA = 125°C
1.E−04 1.E−05
TA = 25°C
1.E−06
1.E−07 1.E−08
TA = −40°C
1.E−09
1.E−10 0 5 10 15 20 25 30 35 40 45
VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 4. Maximum Reverse Characteristics
10,000 1,000
TJ = 25°C
100
10 0 10 20 30 40
VR, REVERSE VOLTAGE (V) Figure 5. Typical Junction Capacitance
IF(AV), AVERAGE FORWARD CURRENT (A)
60 55 RqJC = 1.6°C/W 50 dc 45 40 35 SQUARE WAVE 30 25 20 15 10
5 0
0 20 40 60 80 100 120 140 160.