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NRVB2045EMFST1G Dataheets PDF



Part Number NRVB2045EMFST1G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description SWITCHMODE Power Rectifiers
Datasheet NRVB2045EMFST1G DatasheetNRVB2045EMFST1G Datasheet (PDF)

MBR2045EMFS, NRVB2045EMFS Switch-mode Power Rectifiers These state−of−the−art devices have the following features: Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage Drop • 150°C Operating Junction Temperature • Wettable Flacks Option Available • NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified an.

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MBR2045EMFS, NRVB2045EMFS Switch-mode Power Rectifiers These state−of−the−art devices have the following features: Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage Drop • 150°C Operating Junction Temperature • Wettable Flacks Option Available • NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free and Halide−Free Devices Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. • Lead Finish: 100% Matte Sn (Tin) • Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Device Meets MSL 1 Requirements Applications • Excellent Alternative to DPAK in Space−Constrained Automotive Applications • Output Rectification in Compact Portable Consumer Applications • Freewheeling Diode used with Inductive Loads http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 45 VOLTS 1,2,3 5,6 MARKING DIAGRAM 1 SO−8 FLAT LEAD CASE 488AA STYLE 2 A A A Not Used B2045E AYWZZ C C B2045E A Y W ZZ = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION Device Package Shipping† MBR2045EMFST1G SO−8 FL 1500 / (Pb−Free) Tape & Reel MBR2045EMFST3G NRVB2045EMFST1G SO−8 FL (Pb−Free) SO−8 FL (Pb−Free) 5000 / Tape & Reel 1500 / Tape & Reel NRVB2045EMFST3G SO−8 FL 5000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 May, 2014 − Rev. 1 1 Publication Order Number: MBR2045EMFS/D MBR2045EMFS, NRVB2045EMFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 130°C) Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 120°C) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) VRRM VRWM VR IF(AV) IFRM IFSM V 45 20 A 40 A 400 A Storage Temperature Range Operating Junction Temperature Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) ESD Rating (Human Body Model) Tstg TJ EAS −65 to +175 −55 to +150 150 3B °C °C mJ ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) RθJC − 1.6 °C/W ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) (iF = 10 A, TJ = 125°C) (iF = 10 A, TJ = 25°C) (iF = 20 A, TJ = 125°C) (iF = 20 A, TJ = 25°C) vF V 0.35 0.47 0.45 0.56 0.43 0.58 0.51 0.64 Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR mA 48 100 0.09 0.40 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 100.00 MBR2045EMFS, NRVB2045EMFS TYPICAL CHARACTERISTICS 100.00 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) 10.00 TA = 150°C 10.00 TA = 150°C 125°C 1.00 25°C −40°C 0.10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Voltage 1.00 125°C 25°C −40°C 0.10 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.800.90 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 2. Maximum Instantaneous Forward Voltage IR, INSTANTANEOUS REVERSE CURRENT (A) 1.E+00 1.E−01 1.E−02 1.E−03 1.E−04 1.E−05 1.E−06 1.E−07 1.E−08 1.E−09 1.E−10 0 TA = 150°C TA = 125°C TA = 25°C TA = −40°C 10 20 30 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics 1.E+00 1.E−01 TA = 150°C 1.E−02 1.E−03 TA = 125°C 1.E−04 1.E−05 TA = 25°C 1.E−06 1.E−07 1.E−08 TA = −40°C 1.E−09 1.E−10 0 5 10 15 20 25 30 35 40 45 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 4. Maximum Reverse Characteristics 10,000 1,000 TJ = 25°C 100 10 0 10 20 30 40 VR, REVERSE VOLTAGE (V) Figure 5. Typical Junction Capacitance IF(AV), AVERAGE FORWARD CURRENT (A) 60 55 RqJC = 1.6°C/W 50 dc 45 40 35 SQUARE WAVE 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160.


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