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MBR1635

ON Semiconductor

Switch Mode Power Rectifiers

MBR1635, MBR1645, MBRB1645, NRVBB1645 Switch Mode Power Rectifiers 16 A, 35 and 45 V These state−of−the−art devices us...


ON Semiconductor

MBR1635

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Description
MBR1635, MBR1645, MBRB1645, NRVBB1645 Switch Mode Power Rectifiers 16 A, 35 and 45 V These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features Guard−ring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Mechanical Characteristics: Case: Epoxy, Molded Weight: 1.9 Grams for TO−220 1.7 Grams for D2PAK Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR1635 MBR1645 MBRB1645 VRRM VRWM VR 35 45 45 V Average Rectified Forward Current Delay IF(AV) A (Rated VR, TC = 163°C) Total Device 16 Peak Repetitive Forward Current, Per IFRM 32 A Leg (Rated VR, Square Wave, 20 kHz, TC = 157°C) Total Device Non−Repetitive Peak Surge Current IFSM 150 A (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Surge Current IRRM 1.0 A (2.0 ms, 1.0 kHz) Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Stresse...




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