Ordering number : ENA1126A
FH105A
RF Transistor
10V, 30mA, fT=8GHz, NPN Dual MCP6
http://onsemi.com
Features
• Compos...
Ordering number : ENA1126A
FH105A
RF
Transistor
10V, 30mA, fT=8GHz,
NPN Dual MCP6
http://onsemi.com
Features
Composite type with 2
transistors contained in the MCP package currently in use, improving the mounting efficiency greatly
The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package Optimal for differential amplification due to excellent thermal equilibrium and pair capability
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO IC PC PT Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm2×0.8mm) 1unit When mounted on ceramic substrate (250mm2×0.8mm)
Ratings 20 10 1.5 30
150 300 150 --55 to +150
Unit V V V mA
mW mW °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ) 7026A-005
2.0 654
0.15 FH105A-TR-E
0 to 0.08
0.9 2.1 0.2 0.425 1.25 0.425 0.2
12 0.65
3 0.3
1 : Collector1 2 : Base2 3 : Collector2 4 : Emitter2 5 : Emitter1 6 : Base1
MCP6
Product & Package Information
Package
: MCP6
JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
...