RJK6036DP3-A0

RJK6036DP3-A0 600V - 2A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting Outline RENESAS Package code: PRSP0004ZB-A Package name: SOT-223 4 3 2 1 G Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current VGSS ID Note1 ID Note2 (pulse) IDR Note1 IDR Note2 (pulse) Channel temperature Tch Storage temperature Tstg Notes: 1. Limited Tch max.. Value at Tc = 25C 2. Pulse width limited by safe operating area. Preliminary Datasheet R07DS0841EJ0100 Rev.1.00 Jul 05, 2011 D 1. Gate 2. Drain 3. Source 4. Drain S Ratings 600 ±30 2 4 2 4 150 –55 to +150 (Ta = 25°C) Unit V V A A A A C C R07DS0841EJ0100 Rev.1.00 Jul 05, 2011 Page 1 of 3 RJK6036DP3-A0 Preliminary Electrical Characteristics Item Symbol Min Typ Max Unit Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current V(BR)DSS 600 — —V IDSS — — 1 A IGSS — — ±0.1 A Gate to source cutoff voltage Static drain to source on state resistance VGS(off) 3.0 — 4.5 V RDS(on) — 5.7 6.8  Input capacitance Ciss — 165 — pF Output capacitance Coss — 20 — pF Reverse transfer capacitance Crss — 2.5 — pF Turn-on delay time td(on) — 12 — ns Rise time tr — 12 — ns Turn-off delay time...