Document
CEP630N/CEB630N CEF630N
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP630N CEB630N CEF630N
VDSS 200V 200V
200V
RDS(ON) 0.36Ω 0.36Ω
0.36Ω
ID @VGS 9A 10V 9A 10V 9A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM e
PD
200 ±20 9 36 78 0.63
9d 36 d 33 0.27
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.6 62.5
3.7 65
Units
V V A A W W/ C C
Units C/W C/W
Details are subject to change without notice .
1
Rev 3. 2008.Oct. http://www.cet-mos.com
CEP630N/CEB630N CEF630N
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b
BVDSS IDSS IGSSF IGSSR
VGS = 0V, ID = 250µA VDS = 160V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
Gate Threshold Voltage Static Drain-Source On-Resistance
VGS(th) RDS(on)
VGS = VDS, ID = 250µA VGS = 10V, ID = 5A
Dynamic Characteristics c
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c
gFS Ciss Coss Crss
VDS = 10V, ID = 5A VDS = 25V, VGS = 0V, f = 1.0 MHz
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time
td(on) tr
td(off)
VDD = 100V, ID = 5A, VGS = 10V, RGEN = 50Ω
Turn-Off Fall Time
tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs
VDS = 160V, ID = 5.9A, VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS f
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 9A g
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 5.9A . g.Full package VSD test condition IS = 5.9A .
Min 200
2
Typ
0.30
4 930 130 25 24 15 116 25 19
3 5
Max Units
25 100 -100
V µA nA nA
4V 0.36 Ω
S pF pF pF
48 ns 30 ns 232 ns 50 ns 24.7 nC
nC nC
9A 1.5 V
4
2
ID, Drain Current (A)
C, Capacitance (pF)
CEP630N/CEB630N CEF630N
12
10 VGS=10,9,8,7,6V
8 VGS=6V
6
4
2 VGS=4V
0 0 2 4 6 8 10 12
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
ID, Drain Current (A)
15
12.5
10
7.5
5
2.5 TJ=125C
0 0 1.5
25 C 3.0
-55 C 4.5 6.0
7.5
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
1800
1500
1200
900
600
300
0 0
Ciss
Coss Crss 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS 1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6 -50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation with Temperature
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
IS, Source-drain current (A)
3.0 ID=5A 2.5 VGS=10V 2.0 1.5 1.0 0.5 0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1 0.4 0.7 1.0 1.3 1.6 1.9
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage
Variation with Source Current
VTH, Normalized Gate-Source Threshold Voltage
3
VGS, Gate to Source Voltage (V) ID, Drain Current (A)
CEP630N/CEB630N CEF630N
10 VDS=160V ID=5.9A
8
6
4
2
0 0 5 10 15 20
Qg, Total Gate Charge (nC) Figure 7. Gate Charge
VDD
VIN RL D VOUT
VGS RGEN G
S
102 RDS(ON)Limit
100ms 101 1ms
10ms 100ms 100 DC
TC=25 C TJ=175 C 10-1 Single Pulse 100 101 102 103
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe Operating Area
td(on) VOUT
t on tr
td(off)
90%
10% INVERTED
toff tf
90%
10%
VIN
10%
50%
90% 50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
100
10-1
D=0.5 0.2 0.1
0.05
0.02
0.01
10-2 Single Pulse 10-5
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (sec)
PDM
t1 t2
1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2
100
101
Figure 11. Normalized Thermal Transient Impedance Curve
4
.