KF7N50D

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V, ID= 5.5A RDS(ON)=1.0 (Max) @VGS =10V Qg(typ.) =16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS ID IDP EAS EAR dv/dt PD RATING KF7N50D/I 500 30 5.5 3.5 21 180 4 4.5 69.4 0.56 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg 150 -55 150 Thermal Resistance, Junction-to-Case RthJC Thermal Resistance, Junction-toAmbient RthJA * : Drain current limited by maximum junction temperature. 1.8 110 PIN CONNECTION D www.ckb-sh.com UNIT V V A mJ mJ V/ns W W/ /W /W KF7N50D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF7N50D A CD H G FF B J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_ 0.20 C 5.34 +_ 0.30 D 0.70 +_ 0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_ 0.10 N 0.70 MIN O 0.1 MAX 1 23 O 1. GATE 2. DRAIN 3. SOURCE DPAK (1) KF7N50I AH CJ BD M N G FF 123 K E P L 1. GATE 2. DRAIN 3. SOURCE D...