7N60H

KIA SEMICONDUCTORS 7.0A,600V N-CHANNEL MOSFET 7N60H 1.Description This Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. 2. Features  RDS(on)=1.0Ω @ VGS=10V  Ultra low gate charge (typical 27nC)  Low reverse transfer capacitance  Fast switching capability  Avalanche energy tested  Improved dv/dt capability, high ruggedness 3. Pin configuration Pin 1 2 3 4 1 of 6 Function Gate Drain Source Drain Rev 1.1 JAN 2014 KIA SEMICONDUCTORS 7.0A,600V N-CHANNEL MOSFET 7N60H 4. Absolute maximum ratings Parameter Symbol Drain-source voltage Gate-source voltage VDSS VGSS Drain current continuous TC=25ºC TC=100ºC Drain current pulsed (note1) Avalanche energy Repetitive (note1) Single Pulse (note2) Peak diode recovery dv/dt (note3) ID IDP EAR EAS dv/dt Total power dissipation TC=25ºC Derate above 25ºC PD Junction temperature TJ Storage temperature TSTG * Drain current limited by maximum junction temperature. (TC=25ºC , unless otherwise specified) Rating Units TO-220 TO-220F TO-263 600 V ±30 V 7.0 7.0* 7.0 A 4.2 4.2* 4.2 A 28 28* 28 A 13.5 mJ 215 mJ 4.5 V/ns 140 45 140 W 1.11 0.35...