N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
7.0A,600V N-CHANNEL MOSFET
7N60H
1.Description
This Power MOSFET is produced using KIA`s advanced ...
Description
KIA
SEMICONDUCTORS
7.0A,600V N-CHANNEL MOSFET
7N60H
1.Description
This Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
2. Features
RDS(on)=1.0Ω @ VGS=10V Ultra low gate charge (typical 27nC) Low reverse transfer capacitance Fast switching capability Avalanche energy tested Improved dv/dt capability, high ruggedness
3. Pin configuration
Pin 1 2 3 4
1 of 6
Function Gate Drain
Source Drain
Rev 1.1 JAN 2014
KIA
SEMICONDUCTORS
7.0A,600V N-CHANNEL MOSFET
7N60H
4. Absolute maximum ratings
Parameter
Symbol
Drain-source voltage Gate-source voltage
VDSS VGSS
Drain current continuous
TC=25ºC TC=100ºC
Drain current pulsed (note1)
Avalanche energy
Repetitive (note1) Single Pulse (note2)
Peak diode recovery dv/dt (note3)
ID
IDP EAR EAS dv/dt
Total power dissipation
TC=25ºC Derate above 25ºC
PD
Junction temperature
TJ
Storage temperature
TSTG
* Drain current limited by maximum junction temperature.
(TC=25ºC , unless otherwise specified)
Rating
Units
TO-220 TO-220F TO-263
600 V
±30 V
7.0 7.0* 7.0
A
4.2 4.2* 4.2
A
28 28* 28
A
13.5 mJ
215 mJ
4.5 V/ns
140 45 140
W
1.11 0.35...
Similar Datasheet