EMM5081V1B

FEATURES ・High Output Power: Pout=33.5dBm (typ.) ・High Linear Gain: GL=30dB (typ.) ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package (V1B) EMM5081V1B Ku-Band Power Amplifier MMIC DESCRIPTION The EMM5081V1B is a MMIC amplifier that contains a three-stages amplifier, internally matched, for standard communications band in the 13.75 to 14.5GHz frequency range. This product is well suited for VSAT applications as it offers high power, high gain, and low distortion. Eudyna Devices’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING Item Drain-Source Voltage Gate-Source Voltage Input Power Storage Temperature Symbol VDD VGG Pin Tstg Rating 10 -3 26 -55 to +125 Unit V V dBm ℃ RECOMMENDED OPERATING CONDITIONS Item Symbol Drain-Source Voltage Input Power Operating Case Temperature VDD Pin Tc Recommend Condition ≦6 ≦12 -40 to +85 Unit V dBm ℃ ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25℃) Item Symbol Test Conditions Frequency Range Gate Bias Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Gain Flatness Power-added Efficiency at 1dB G.C.P. Third Order Intermodulation* Drain Current at 1dB G.C.P. Input Return Loss (at Pin=-20dBm) Output Return Loss (at Pin=-20dBm) Thermal Resistance 1dB G.C.P. : 1dB Gain Compression Point S.C.L. : Single Carrier Level f VDD=6.0V VGG(DC) IDD(DC)=1200mA typ. P1dB ZS=ZL=50ohm G1dB delta-G Nadd IM3* *delta f=10MHz IDD(RF) 2-ton...