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SMM5845V1B

SUMITOMO

K-Band Power Amplifier MMIC

SMM5845V1B FEATURES ・High Output Power: Pout=33.0dBm (typ.) ・High Linear Gain: GL=22.0dB (typ.) ・Broad Band:21.2 to 23....


SUMITOMO

SMM5845V1B

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Description
SMM5845V1B FEATURES ・High Output Power: Pout=33.0dBm (typ.) ・High Linear Gain: GL=22.0dB (typ.) ・Broad Band:21.2 to 23.6GHz ・Impedance Matched Zin/Zout=50ohm ・Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The SMM5845V1B is a MMIC amplifier that contains a four-stage amplifier, internally matched, for standard communications band in the 21.2 to 23.6GHz frequency range. SEDI’s stringent Quality Assurance Program assures the highest reliability and consistent performance. K-Band Power Amplifier MMIC ABSOLUTE MAXIMUM RATING Item Drain-Source Voltage Gate-Source Voltage Input Power Storage Temperature Symbol VDD VGG Pin Tstg Rating 10 -3 23 -55 to +125 Unit V V dBm deg.C RECOMMENDED OPERATING CONDITIONS Item Symbol Drain-Source Voltage Input Power Operating Case Temperature VDD Pin TC Condition =< 6 =<16 -40 to +85 Unit V dBm deg.C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Symbol Test Conditions Limits Min. Typ. Max. Unit Frequency Range f VDD=6.0V 21.2 - 23.6 GHz Gate Bias Voltage Vgg(DC) IDD(DC)=1400mA typ. -0.50 -0.15 -0.01 V Output Power Output Power at 1dB G.C.P. POUT P1dB PIN=+12.5dBm Vgg-Const. 30.5 33 - dBm - 33 - dBm Power Gain at 1dB G.C.P. G1dB 18 21 - dB Power-added Efficiency at 1dB G.C.P. Nadd Vgg-Const. - 20 - % Third Order Intermodulation Distortion * IM3 Zs=Zl=50ohm -38 -42 - dBc Drain Current at 1dB G.C.P. Iddrf * : df=+10MHz - 1800 2200 mA Input Return Loss at Pin=-20dBm RLin Pout=2...




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