KGT25N120NDA

SEMICONDUCTOR TECHNICAL DATA KGT25N120NDA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High system efficiency Soft current turn-off waveforms Extremely enhanced avalanche capability H A N O D E d PP 123 IF C J R QB K G L M T 1. GATE 2. COLLECTOR 3. EMITTER DIM MILLIMETERS A 15.60 +_ 0.20 B 4.80 +_ 0.20 C 19.90 +_ 0.20 D 2.00 +_ 0.20 d 1.00 +_ 0.20 E 3.00 +_ 0.20 F 3.80 +_ 0.20 G 3.50 +_ 0.20 H 13.90 +_ 0.20 I 12.76 +_ 0.20 J 23.40 +_ 0.20 K 1.5+0.15-0.05 L 16.50 +_ 0.30 M 1.40 +_ 0.20 N 13.60 +_ 0.20 O 9.60 +_ 0.20 P 5.45 +_ 0.30 Q 3.20 +_ 0.10 R 18.70 +_ 0.20 T 0.60+0.15-0.05 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 Gate-Emitter Voltage VGES 20 Collector Current @Tc=25 @Tc=100 50 IC 25 Pulsed Collector Current ICM* 90 Diode Continuous Forward Current @Tc=100 IF 25 Diode Maximum Forward Current IFM 150 Maximum Power Dissipation @Tc=25 @Tc=100 310 PD 125 Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 to + 150 *Repetitive rating : Pulse width limited by max. junction temperature V V A A A A A W W THERMAL CHARACTERISTIC CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) Thermal Resistance, Junction to Ambient SYMBOL R JC R JC R JA M...