KGT15N60FDA

SEMICONDUCTOR TECHNICAL DATA KGT15N60FDA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness as well as short circuit ruggedness. It is designed for hard switching applications. FEATURES High speed switching High system efficiency Short Circuit Withstand Times 5us(@TC=100 Extremely enhanced avalanche capability ) Q K AC F O E LM D NN 123 G B J R H 1. GATE 2. COLLECTOR 3. EMITTER DIM MILLIMETERS A 10.16 +_ 0.2 B 15.87 +_ 0.2 C 2.54 +_ 0.2 D 0.8 +_ 0.1 E 3.18 +_ 0.1 F 3.3 +_ 0.1 G 12.57 +_ 0.2 H 0.5 +_ 0.1 J 13.0 +_ 0.5 K 3.23 +_ 0.1 L 1.47 MAX M 1.47 MAX N 2.54 +_ 0.2 O 6.68 +_ 0.2 Q 4.7 +_ 0.2 R 2.76 +_ 0.2 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL UNIT TO-220IS(1) TO-220AB Collector-Emitter Voltage VCES 600 V Gate-Emitter Voltage VGES 20 V Collector Current @Tc=25 15 30 A IC @Tc=100 7.5 15 A Pulsed Collector Current I (1) CM 60 A Diode Continuous Forward Current @Tc=25 I (1) F 30 A Diode Maximum Forward Current I (1) FM 60 A @Tc=25 41.6 Maximum Power Dissipation PD *Repetitive rating : Pulse width limited b@yTmc=ax1.0j0unction temperature 17 138 W 55 W Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 to + 150 (1) : Pulse width limited by maximum junction temperature. TO-220IS (1) C G E THERMAL CHARACTERISTIC CHARACTERISTIC Thermal Resistance, Junction to Case (IGBT) Thermal Resistance, Junction to Case (DIODE) Thermal R...