MHW5222

MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier . . . designed for broadband applications requiring low distortion characteristics. Specifically intended for CATV market requirements. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT, and an all gold metallization system. Broadband Power Gain  @ f = 40 – 450 MHz Gp = 22 dB (Typ) Broadband Noise Figure  @ f = 40 – 450 MHz NF = 4.5 dB (Typ) Superior Gain, Return Loss and DC Current Stability with Temperature All Gold Metallization 7.0 GHz Ion–Implanted Transistors Order this document by MHW5222A/D MHW5222A 22 dB GAIN 450 MHz 60–CHANNEL CATV TRUNK AMPLIFIER ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit RF Voltage Input (Single Tone) DC Supply Voltage Operating Case Temperature Range Storage Temperature Range Vin VCC TC Tstg + 70 + 28 – 20 to +100 – 40 to +100 dBmV Vdc °C °C CASE 714–06, STYLE 1 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted) Characteristic Symbol Min Typ Max Unit Frequency Range BW 40 — 450 MHz Power Gain — 50 MHz Power Gain — 450 MHz Slope Gp 21.4 22 22.6 dB Gp 22.0 22.9 23.5 dB S 0.2 0.5 1.5 dB Gain Flatness (Peak To Valley) — — 0.2 0.4 dB Return Loss — Input/Output (Zo = 75 Ohms) 40 – 450 MHz Second Order Intermodulation Distortion (Vout = + 46 dBmV, Ch 2, M6, M15) (Vout = + 44 dBmV, Ch 2, M13, M22) Cross Modulation Distortion (Vout = + 46 dBmV) 53–Channel FLAT 60–Channel FLAT Compos...