Purpose Transistors. PN2222A Datasheet

PN2222A Transistors. Datasheet pdf. Equivalent

Part PN2222A
Description NPN Silicon General Purpose Transistors
Feature PN2222, PN2222A General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available* .
Manufacture ON Semiconductor
Datasheet
Download PN2222A Datasheet



PN2222A
PN2222, PN2222A
General Purpose
Transistors
NPN Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
PN2222
PN2222A
VCEO
Collector-Base Voltage
PN2222
PN2222A
VCBO
Emitter-Base Voltage
PN2222
PN2222A
VEBO
Collector Current Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
IC
PD
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
Value
30
40
60
75
5.0
6.0
600
625
5.0
1.5
12
55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction-to-Ambient
RqJA
200 °C/W
Thermal Resistance,
Junction-to-Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
PN
2222
YWW G
G
PN2
222A
YWW G
G
PN2222
PN2222A
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
February, 2010 Rev. 5
1
Publication Order Number:
PN2222/D



PN2222A
PN2222, PN2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125°C)
(VCB = 50 Vdc, IE = 0, TA = 125°C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
PN2222
PN2222A
PN2222
PN2222A
PN2222
PN2222A
PN2222A
PN2222
PN2222A
PN2222
PN2222A
PN2222A
PN2222A
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = 55°C)
(IC = 150 mAdc, VCE = 10 Vdc) (Note 1)
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 1)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 1)
PN2222A only
PN2222
PN2222A
Collector Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
PN2222
PN2222A
PN2222
PN2222A
Base Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
PN2222
PN2222A
PN2222
PN2222A
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (Note 2)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
PN2222
PN2222A
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
PN2222
PN2222A
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
PN2222A
PN2222A
PN2222A
PN2222A
PN2222A
PN2222A
http://onsemi.com
2
Symbol
Min Max
Unit
V(BR)CEO
30
Vdc
40
V(BR)CBO
60
75
Vdc
V(BR)EBO
5.0
6.0
Vdc
ICEX
nAdc
10
ICBO
mAdc
0.01
0.01
10
10
IEBO
nAdc
100
IBL nAdc
20
hFE
VCE(sat)
VBE(sat)
35
50
75
35
100 300
50
30
40
0.4
0.3
1.6
1.0
1.3
0.6 1.2
2.6
2.0
Vdc
Vdc
fT
Cobo
Cibo
hie
hre
hfe
250
300
2.0
0.25
50
75
8.0
30
25
8.0
1.25
8.0
4.0
300
375
MHz
pF
pF
kW
X 104





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