Silicon Diode
SANKEN ELECTRIC CO., LTD.
1. Scope The present specifications shall apply to an FMN-1106S
2. Outline Type Silicon Diode
...
Description
SANKEN ELECTRIC CO., LTD.
1. Scope The present specifications shall apply to an FMN-1106S
2. Outline Type Silicon Diode
FMN-1106S
Structure
Resin Molded
Flammability : UL94V-0 (Equivalent)
Applications
High Frequency Rectification
3.
071009
1/5
61426-01
SANKEN ELECTRIC CO., LTD. 4. Absolute maximum ratings
No. Item 1 Transient Peak Reverse Voltage 2 Peak Reverse Voltage 3 Average Forward Current 4 Peak Surge Forward Current 5 I2t Limiting Value 6 Junction Temperature 7 Storage Temperature
Symbol Unit
VRSM VRM IF (AV) IFSM I2t
V V A A A2s
Tj °C Tstg °C
Rating 600 600 10 150 112.5
-40 +150 -40 +150
FMN-1106S Conditions
10msec. Half sinewave, one shot 1ms≤ ≤10 s
5. Electrical characteristics (Ta=25℃, unless otherwise specified)
No
Item
Symbol Unit
Value
1 Forward Voltage Drop
VF V
1.3 max.
2 Reverse Leakage Current
IR
3
Reverse Leakage Current Under High Temperature
H IR
4 Reverse Recovery Time
trr1 trr2
uA mA ns ns
100 max. 10 max. 100 max. 50 max.
5 Thermal Resistance
Rth (j-c) °C /W
4.0 max.
Conditions
IF= 10A
VR=VRM
VR=VRM, Tj=150°C IF=IR=100mA 90% Recovery point, Tj=25°C IF=100mA,IR=200mA, 75% Recovery point ,Tj=25°C Between Junction and case
071009
2/5
61426-01
SANKEN ELECTRIC CO., LTD. 6. Characteristics
20 Tj=150°C
15 10
5
IF(AV) - PF
t/T=1/6 t/T=1/3,sinewave t/T=1/2
DC
PF (W) Forward Power Dissipation (W)
0 0
246 IF(AV) (A)
Average Forward Current (A)
8
FMN-1106S 10
PR (W) Reverse Power Dissipation (W)
6 Tj=150°C
5
4
3
2
...
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