128 GBIT (8G x 8-BIT x 2) CMOS NAND E2PROM
TOSHIBA CONFIDENTIAL TH58NVG7D2GTA20
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
128 GBIT (8G ...
Description
TOSHIBA CONFIDENTIAL TH58NVG7D2GTA20
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
128 GBIT (8G 8 BIT 2) CMOS NAND E2PROM (Multi-Level-Cell)
DESCRIPTION
The TH58NVG7D2G is a single 3.3 V 128 Gbit (149,189,296,128 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 640) bytes 256 pages 8248 blocks. The device has two 8832-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 8832-byte increments. The Erase operation is implemented in a single block unit (2 Mbytes 160 Kbytes: 8832 bytes 256 pages).
The TH58NVG7D2G is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
Organization
Memory cell array Register Page size Block size
TH58NVG7D2G 8832 512K 8 2 8832 8 8832 bytes (2M 160 K) bytes
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
Mode control Serial input/output
Command control
Number of valid blocks Min 7992 blocks Max 8248 blocks
Power suppl...
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