TH58NVG7D2GTA20

TOSHIBA CONFIDENTIAL TH58NVG7D2GTA20 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128 GBIT (8G  8 BIT  2) CMOS NAND E2PROM (Multi-Level-Cell) DESCRIPTION The TH58NVG7D2G is a single 3.3 V 128 Gbit (149,189,296,128 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 640) bytes  256 pages  8248 blocks. The device has two 8832-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 8832-byte increments. The Erase operation is implemented in a single block unit (2 Mbytes  160 Kbytes: 8832 bytes  256 pages). The TH58NVG7D2G is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. FEATURES  Organization Memory cell array Register Page size Block size TH58NVG7D2G 8832  512K  8  2 8832  8 8832 bytes (2M  160 K) bytes  Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read  Mode control Serial input/output Command control  Number of valid blocks Min 7992 blocks Max 8248 blocks  Power suppl...