CEM9935A

CEM9935A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.0A, RDS(ON) = 36mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. RDS(ON) = 75mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 D1 D2 D2 876 5 5 SO-8 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID 6.0 IDM 24 Maximum Power Dissipation PD 2.0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units V V A A W C Units C/W 2003.July 5 - 233 http://www.cet-mos.com CEM9935A Electrical Characteristics TA = 25 C unless otherwise noted Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current On Characteristics c Symbol Test Condition BVDSS IDSS IGSS VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics d VGS(th) RDS(on) gFS VGS = VDS, ID = 250µA VGS = 10V, ID = 6.0A VGS = 4.5V, ID = 4.3A VGS = 2.5V, ID = 3.5A VDS = 10V, ID = 4.3A Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d C...