Single N-Channel Enhancement Mode Field Effect Transistor
Description
CEM1010
Single N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
100V, 9.5A, RDS(ON) = 15.5mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 ...
