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MBRB20200CT

ON Semiconductor

Power Rectifier

MBRB20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with ...


ON Semiconductor

MBRB20200CT

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Description
MBRB20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 kHz to 5.0 MHz. Features 200 V Blocking Voltage Low Forward Voltage Drop Guardring for Stress Protection and High dv/dt Capability (10,000 V/ms) Dual Diode Construction − Terminals 1 and 3 Must be Connected for Parallel Operation at Full Rating Pb−Free Packages are Available http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 V 1 4 3 Mechanical Characteristics: Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 Weight: 1.7 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL1 Requirements MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 134°C) Per Leg Per Device VRRM VRWM VR IF(AV) 200 10 20 V A Peak Repetitive Forward Current IFRM 20 A (At Rated VR, Square Wave, 20 kHz, TC = +137°C) Per Leg Nonrepetitive Peak Surge Current IFSM 150 A (Surge Applied at Rated Load Conditions Half...




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