Document
NTMFS5C612NL
MOSFET – Power, Single, N-Channel
60 V, 1.5 mW, 235 A
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NTMFS5C612NLWF − Wettable Flank Option for Enhanced Optical
Inspection
• These Devices are Pb−Free and are RoHS Compliant
www.onsemi.com
V(BR)DSS 60 V
RDS(ON) MAX 1.5 mW @ 10 V 2.3 mW @ 4.5 V
ID MAX 235 A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State TC = 25°C
PD
TC = 100°C
235
A
166
167 W
83
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA (Notes 1 & 2)
TA = 25°C
ID
Steady TA = 100°C
State TA = 25°C
PD
TA = 100°C
36
A
25
3.8
W
1.9
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
900
A
Operating Junction and Storage Temperature
TJ, Tstg − 55 to °C +175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 17 A)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IS
164
A
EAS
451 mJ
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
0.9 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
39
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
D (5)
G (4)
S (1,2,3) N−CHANNEL MOSFET
1
DFN5 (SO−8FL) CASE 488AA STYLE 1
MARKING DIAGRAM
D
S
D
S XXXXXX
S AYWZZ
G
D
D
XXXXXX = 5C612L
XXXXXX = (NTMFS5C612NL) or
XXXXXX = 612LWF
XXXXXX = (NTMFS5C612NLWF)
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
May, 2019 − Rev. 3
Publication Order Number: NTMFS5C612NL/D
NTMFS5C612NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temperature Coefficient
V(BR)DSS V(BR)DSS/
TJ
VGS = 0 V, ID = 250 mA
60 12.7
V mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4)
IDSS IGSS
VGS = 0 V, VDS = 60 V
TJ = 25 °C TJ = 125°C
VDS = 0 V, V.