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NTMFS5C612NL Dataheets PDF



Part Number NTMFS5C612NL
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTMFS5C612NL DatasheetNTMFS5C612NL Datasheet (PDF)

NTMFS5C612NL MOSFET – Power, Single, N-Channel 60 V, 1.5 mW, 235 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NTMFS5C612NLWF − Wettable Flank Option for Enhanced Optical Inspection • These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS 60 V RDS(ON) MAX 1.5 mW @ 10 V 2.3 mW @ 4.5 V ID MAX 235 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol.

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NTMFS5C612NL MOSFET – Power, Single, N-Channel 60 V, 1.5 mW, 235 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NTMFS5C612NLWF − Wettable Flank Option for Enhanced Optical Inspection • These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS 60 V RDS(ON) MAX 1.5 mW @ 10 V 2.3 mW @ 4.5 V ID MAX 235 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 235 A 166 167 W 83 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1 & 2) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 36 A 25 3.8 W 1.9 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 900 A Operating Junction and Storage Temperature TJ, Tstg − 55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 17 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 164 A EAS 451 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 0.9 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. D (5) G (4) S (1,2,3) N−CHANNEL MOSFET 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 MARKING DIAGRAM D S D S XXXXXX S AYWZZ G D D XXXXXX = 5C612L XXXXXX = (NTMFS5C612NL) or XXXXXX = 612LWF XXXXXX = (NTMFS5C612NLWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2016 1 May, 2019 − Rev. 3 Publication Order Number: NTMFS5C612NL/D NTMFS5C612NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS V(BR)DSS/ TJ VGS = 0 V, ID = 250 mA 60 12.7 V mV/°C Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4) IDSS IGSS VGS = 0 V, VDS = 60 V TJ = 25 °C TJ = 125°C VDS = 0 V, V.


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