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FSPYC260F4 Dataheets PDF



Part Number FSPYC260F4
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Datasheet FSPYC260F4 DatasheetFSPYC260F4 Datasheet (PDF)

FSPYC260R, FSPYC260F TM Data Sheet May 2000 File Number 4850.1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power FETs combine this electrical capability with total dose radiation har.

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FSPYC260R, FSPYC260F TM Data Sheet May 2000 File Number 4850.1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power FETs combine this electrical capability with total dose radiation hardness up to 300K RADS while maintaining the guaranteed performance for SEE (Single Event Effects) which the Intersil FS families have always featured. The Intersil portfolio of Star*Power FETS includes a family of devices in various voltage, current and package styles. The Star*Power family consists of Star*Power and Star*Power Gold products. Star*Power FETS are optimized for total dose and rDS(ON) performance while exhibiting SEE capability at full rated voltage up to an LET of 37. Star*Power Gold FETS have been optimized for SEE and Gate Charge providing SEE performance to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specifically designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, power distribution, motor drives and relay drivers as well as other power control and conditioning applications. As with conventional MOSFETs these Radiation Hardened MOSFETs offer ease of voltage control, fast switching speeds and ability to parallel switching devices. Reliability screening is available as either, TXV or Space equivalent of MIL-S-19500. Formerly available as type TA45211W. Features • 58A, 200V, rDS(ON) = 0.031Ω • UIS Rated • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) - Rated to 300K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS • Photo Current - 17nA Per-RAD (Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Symbol D G S Packaging SMD2 Ordering Information RAD LEVEL 10K 100K 100K 300K 300K SCREENING LEVEL Engineering samples TXV Space TXV Space PART NUMBER/BRAND FSPYC260D1 FSPYC260R3 FSPYC260R4 FSPYC260F3 FSPYC260F4 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. Star*Power™ is a trademark of Intersil Corporation. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000 FSPYC260R, FSPYC260F Absolute Maximum Ratings TC.


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