Document
APM2522NU
N-Channel Enhancement Mode MOSFET
Features
• 25V/30A,
RDS(ON)=14.5mΩ (Typ.) @ VGS=10V RDS(ON)=21.5mΩ (Typ.) @ VGS=4.5V
• Super High Dense Cell Design • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
G S
D
Top View of TO-252
D
Applications
• Power Management in Desktop Computer or
DC/DC Converters
G
S
N-Channel MOSFET
Ordering and Marking Information
APM2522N
Assembly Material Handling Code Temperature Range Package Code
Package Code U : TO-252
Operating Junction Temperature Range C : -55 to 150 oC
Handling Code TR : Tape & Reel
Assembly Material G : Halogen and Lead Free Device
APM2522N U : APM2522N XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp. Rev. A.3 - Apr., 2009
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APM2522NU
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA = 25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
IDP 300µs Pulse Drain Current Tested
Mounted On Large Heat Sink
TC=25°C TC=25°C TC=100°C
ID Continuous Drain Current
PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Mounted On PCB Of 1in2 Pad Area
TC=25°C TC=100°C TC=25°C TC=100°C
ID Continuous Drain Current
TA=25°C TA=100°C
PD Maximum Power Dissipation
TA=25°C TA=100°C
RθJA Thermal Resistance-Junction to Ambient
Mounted On PCB Of Minimum Footprint
ID Continuous Drain Current
TA=25°C TA=100°C
PD Maximum Power Dissipation
TA=25°C TA=100°C
RθJA Thermal Resistance-Junction to Ambient
Note : * Current limited by bond wire.
Rating
25 ±20 150 -55 to 150 20 100 70
30* 20 50 20 2.5
9 6 2.5 1 50
7 4 1.5 0.5 75
Unit
V °C °C A A
A W °C/W
A W °C/W
A °C/W °C/W
Copyright © ANPEC Electronics Corp. Rev. A.3 - Apr., 2009
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APM2522NU
Electrical Characteristics
(T A
=
25°C)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
Diode Characteristics VSDa Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge
Dynamic Characteristics b
VGS=0V, IDS=250µA VDS=20V, VGS=0V
TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=20A VGS=4.5V, IDS=10A
ISD=10A, VGS=0V
ISD=8A, dISD/dt =100A/µs
RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-On Delay Time
tr Turn-On Rise Time td(OFF) Turn-Off Delay Time
tf Turn-Off Fall Time Gate Charge Characteristics b
VGS=0V,VDS=0V,F=1MHz
VGS=0V, VDS=15V, Frequency=1.0MHz
VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω
Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS=15V, VGS=10V, IDS=20A
Note a : Pulse test ; pulse width ≤ 300µs, duty cycle ≤ 2%. Note b : Guaranteed by design, not subject to production testing.
APM2522NU Min. Typ. Max.
25 -
-
- -1
- - 30
1 1.5 2.5
- - ±100
- 14.5 20
- 21.5 28
- 0.7 1.1 - 20 - 10 -
-2- 825 - 125 - 85 - 8 15 - 13 24 - 29 53 - 8 15
- 17 24 -2-5-
Unit
V µA V nA mΩ
V ns nC Ω pF
ns
nC
Copyright © ANPEC Electronics Corp. Rev. A.3 - Apr., 2009
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APM2522NU
Typical Operating Characteristics
Ptot - Power (W)
Power Dissipation
60
50
40
30
20
10 T =25oC
C
0 0 20 40 60 80 100 120 140 160 180
Tj - Junction Temperature (°C)
ID - Drain Current (A)
Drain Current
35
30
25
20
15
10
5
T =25oC,V =10V
0C
G
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
ID - Drain Current (A)
Safe Operation Area
300
100
Rds(on) Limit
10
1
1ms 10ms 100ms 1s
DC
T =25oC
0.1 C 0.1
1
10 70
VDS - Drain - Source Voltage (V)
Normalized Effective Transient
Thermal Transient Impedance
2
1
Duty = 0.5
0.2 0.1 0.05 0.02
0.1
0.01
Single Pulse
0.01 1E-4 1E-3 0.01
Mounted on 1in2 pad R :50oC/W
θJA
0.1 1 10 100
Square Wave Pulse Duration (sec)
Copyright © ANPEC Electronics Corp. Rev. A.3 - Apr., 2009
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APM2522NU
Typical Operating Characteristics (Cont.)
ID - Drain Current (A)
Output Characteristics
60 V = 5,6,7,8,9,10V
GS
4V
50
3.5V 40
30 3V
20
10 2.5V
0 0.0 0.5 1.0 1.5 2.