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APM2522NU Dataheets PDF



Part Number APM2522NU
Manufacturers Anpec Electronics Coropration
Logo Anpec Electronics Coropration
Description N-Channel MOSFET
Datasheet APM2522NU DatasheetAPM2522NU Datasheet (PDF)

APM2522NU N-Channel Enhancement Mode MOSFET Features • 25V/30A, RDS(ON)=14.5mΩ (Typ.) @ VGS=10V RDS(ON)=21.5mΩ (Typ.) @ VGS=4.5V • Super High Dense Cell Design • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description G S D Top View of TO-252 D Applications • Power Management in Desktop Computer or DC/DC Converters G S N-Channel MOSFET Ordering and Marking Information APM2522N Assembly Material Handling Code Temperature Range Pack.

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APM2522NU N-Channel Enhancement Mode MOSFET Features • 25V/30A, RDS(ON)=14.5mΩ (Typ.) @ VGS=10V RDS(ON)=21.5mΩ (Typ.) @ VGS=4.5V • Super High Dense Cell Design • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description G S D Top View of TO-252 D Applications • Power Management in Desktop Computer or DC/DC Converters G S N-Channel MOSFET Ordering and Marking Information APM2522N Assembly Material Handling Code Temperature Range Package Code Package Code U : TO-252 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device APM2522N U : APM2522N XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright © ANPEC Electronics Corp. Rev. A.3 - Apr., 2009 1 www.anpec.com.tw APM2522NU Absolute Maximum Ratings Symbol Parameter Common Ratings (TA = 25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current IDP 300µs Pulse Drain Current Tested Mounted On Large Heat Sink TC=25°C TC=25°C TC=100°C ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Mounted On PCB Of 1in2 Pad Area TC=25°C TC=100°C TC=25°C TC=100°C ID Continuous Drain Current TA=25°C TA=100°C PD Maximum Power Dissipation TA=25°C TA=100°C RθJA Thermal Resistance-Junction to Ambient Mounted On PCB Of Minimum Footprint ID Continuous Drain Current TA=25°C TA=100°C PD Maximum Power Dissipation TA=25°C TA=100°C RθJA Thermal Resistance-Junction to Ambient Note : * Current limited by bond wire. Rating 25 ±20 150 -55 to 150 20 100 70 30* 20 50 20 2.5 9 6 2.5 1 50 7 4 1.5 0.5 75 Unit V °C °C A A A W °C/W A W °C/W A °C/W °C/W Copyright © ANPEC Electronics Corp. Rev. A.3 - Apr., 2009 2 www.anpec.com.tw APM2522NU Electrical Characteristics (T A = 25°C) Symbol Parameter Test Conditions Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current RDS(ON) a Drain-Source On-state Resistance Diode Characteristics VSDa Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics b VGS=0V, IDS=250µA VDS=20V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=20A VGS=4.5V, IDS=10A ISD=10A, VGS=0V ISD=8A, dISD/dt =100A/µs RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-On Delay Time tr Turn-On Rise Time td(OFF) Turn-Off Delay Time tf Turn-Off Fall Time Gate Charge Characteristics b VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=15V, VGS=10V, IDS=20A Note a : Pulse test ; pulse width ≤ 300µs, duty cycle ≤ 2%. Note b : Guaranteed by design, not subject to production testing. APM2522NU Min. Typ. Max. 25 - - - -1 - - 30 1 1.5 2.5 - - ±100 - 14.5 20 - 21.5 28 - 0.7 1.1 - 20 - 10 - -2- 825 - 125 - 85 - 8 15 - 13 24 - 29 53 - 8 15 - 17 24 -2-5- Unit V µA V nA mΩ V ns nC Ω pF ns nC Copyright © ANPEC Electronics Corp. Rev. A.3 - Apr., 2009 3 www.anpec.com.tw APM2522NU Typical Operating Characteristics Ptot - Power (W) Power Dissipation 60 50 40 30 20 10 T =25oC C 0 0 20 40 60 80 100 120 140 160 180 Tj - Junction Temperature (°C) ID - Drain Current (A) Drain Current 35 30 25 20 15 10 5 T =25oC,V =10V 0C G 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) ID - Drain Current (A) Safe Operation Area 300 100 Rds(on) Limit 10 1 1ms 10ms 100ms 1s DC T =25oC 0.1 C 0.1 1 10 70 VDS - Drain - Source Voltage (V) Normalized Effective Transient Thermal Transient Impedance 2 1 Duty = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 Single Pulse 0.01 1E-4 1E-3 0.01 Mounted on 1in2 pad R :50oC/W θJA 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright © ANPEC Electronics Corp. Rev. A.3 - Apr., 2009 4 www.anpec.com.tw APM2522NU Typical Operating Characteristics (Cont.) ID - Drain Current (A) Output Characteristics 60 V = 5,6,7,8,9,10V GS 4V 50 3.5V 40 30 3V 20 10 2.5V 0 0.0 0.5 1.0 1.5 2.


STV5725 APM2522NU 80C286-883


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