Power Transistors
2SC2497, 2SC2497A
Silicon NPN epitaxial planar type
For low-frequency power amplification Complementa...
Power
Transistors
2SC2497, 2SC2497A
Silicon
NPN epitaxial planar type
For low-frequency power amplification Complementary to 2SA1096, 2SC1096A
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
3.8±0.3 11.0±0.5
■ Features
3.05±0.1
High collector-emitter voltage (Base open) VCEO
TO-126B package which requires no insulation plate for installation to the heat sink
1.9±0.1 16.0±1.0
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e Collector-base voltage (Emitter open) VCBO
70
V
c type) Collector-emitter voltage 2SC2497 VCEO
50
V
n d ge. ed (Base open)
2SC2497A
60
le sta ntinu Emitter-base voltage (Collector open) VEBO
5
V
a e cyc isco Collector current
IC
1.5
A
life d, d Peak collector current
ICP
3
A
n u duct type Collector power dissipation
PC
1.2
W
te tin Pro ued Junction temperature
Tj
150
°C
four ntin Storage temperature
Tstg −55 to +150 °C
0.75±0.1
0.5±0.1
4.6±0.2 2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter 2: Collector 3: Base TO-126B-A1 Package
in n s followliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
inc typ Collector-base voltage (Emitter open)
c tinued ance Collector-emitter voltage 2SC2497
M is con inten (Base open)
2SC2497A
VCBO VCEO
IC = 1 mA, IE = 0 IC = 2 mA, IB = 0
/Dis ma Collector-base cutoff current (Emitter open)
D ance type, Collector-emitter cutoff current (Base open)
ten ce Emitter-base cutoff current (Collector open) ain nan Forw...
