Power Transistors
2SD1256
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB933
8.5±0.2 6.0±0.5...
Power
Transistors
2SD1256
Silicon
NPN epitaxial planar type
For power switching Complementary to 2SB933
8.5±0.2 6.0±0.5
Unit: mm
3.4±0.3 1.0±0.1
10.0±0.3 1.5±0.1
s Features
q Low collector to emitter saturation voltage VCE(sat) q Satisfactory linearity of foward current transfer ratio hFE q Large collector current IC q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO VCEO VEBO ICP IC
PC
Tj Tstg
130 80 7 10 5 40 1.3 150 –55 to +150
Unit V V V A A
W
˚C ˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current Emitter cutoff current Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf
VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 2A IC = 4A, IB = 0.2A IC = 4A, IB = 0.2A VCE = 10V, IC = 0.5A, f = 10MHz
IC = 2A, IB1 = 0.2A, IB2 = – 0.2A, VCC = 50V
*hFE2 Rank classification
Rank
R
Q
hFE2 60 to 120 90 to 180
P 130 to 260
4.4±0.5 2....
