P-Channel Silicon MOSFET
Ordering number : ENN6919
Features
• Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive.
FSS133
P-Channel Si...
Description
Ordering number : ENN6919
Features
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
FSS133
P-Channel Silicon MOSFET
FSS133
Load Switching Applications
Package Dimensions
unit : mm 2116
[FSS133] 85
0.1 1.5 1.8max 4.4 0.3 6.0
1 5.0
4
1 : Source 2 : Source 3 : Source 0.2 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain
Specifications
Absolute Maximum Ratings at Ta=25°C
0.595 1.27 0.43
SANYO : SOP8
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm)
Ratings --20 ±10 --8 --52 1.8 150
--55 to +150
Unit V V A A W °C °C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittan...
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