FSS139

Ordering number : ENN7019 FSS139 P-Channel Silicon MOSFET FSS139 Load Switching Applications Features Package Dimensions unit : mm 2116 [FSS139] 8 5 0.3 4.4 6.0 0.2 5.0 0.595 1.27 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.43 0.1 1.5 1.8max 1 4 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 Ratings -20 ± 10 --4 -48 1.8 150 --55 to +150 Unit V V A A W °C °C Mounted on a ceramic board (1200mm2!0.8mm) Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=-20V, VGS=0 VGS=± 8V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--4A Ratings min --20 --1 ± 10 --0.4 6.3 9 --1.4 typ max Unit V µA µA V S Mar king : S139 Contin ued on ne xt pa ge. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expecte...