IRLML0030PBF-1

IRLML0030PbF-1 VDS 30 V HEXFET® Power MOSFET VGS Max ± 20 V G1 RDS(on) max (@VGS = 10V) 27 mΩ 3D RDS(on) max (@VGS = 4.5V) 40 mΩ S2 Micro3TM (SOT-23) Features Industry-standard pinout SOT-23 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRLML0030TRPbF-1 Package Type Micro3™ (SOT-23) Standard Pack Form Quantity Tape and Reel 3000 Orderable Part Number IRLML0030TRPbF-1 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TA = 25°C Maximum Power Dissipation PD @TA = 70°C Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage TJ, TSTG Junction and Storage Temperature Range Max. 30 5.3 4.3 21 1.3 0.8 0.01 ± 20 -55 to + 150 Thermal Resistance Symbol Parameter eRθJA Junction-to-Ambient fRθJA Junction-to-Ambient (t<10s) Typ. ––– ––– Max. 100 99 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes  through „ are on page 2 Units V A W W/°C V °C Units °C/W 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 24, 2014 IRLML0030PbF-1 Electric Characteristics @ TJ = 25°C (unless otherwise specif...