NTD5862N

NTD5862N, NTP5862N MOSFET – Power, N-Channel 60 V, 98 A, 5.7 mW Features Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage − Continuous VGS ±20 V Gate−to−Source Voltage − Non−Repetitive (tp < 10 ms) VGS ±30 V Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD 98 A 69 115 W Pulsed Drain Current tp = 10 ms IDM 335 A Operating Junction and Storage Temperature TJ, Tstg −55 to °C 175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (L = 0.3 mH) IS 96 A EAS 205 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Junction−to−Case (Drain) RqJC Junction−to−Ambient − Steady State (Note 2) RqJA 1. Limited by package to 50 A continuous. 2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces. Value 1.3 37 Unit °C/W www.onsemi.com V(BR)DSS 60 V RDS(on) MAX 5.7 mW @ 10 V D ID MAX 98 A N−Channel G S...