N-Channel Power MOSFET
NTD5862N, NTP5862N
MOSFET – Power, N-Channel
60 V, 98 A, 5.7 mW
Features
• Low RDS(on) • High Current Capability • 100...
Description
NTD5862N, NTP5862N
MOSFET – Power, N-Channel
60 V, 98 A, 5.7 mW
Features
Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage − Continuous
VGS
±20
V
Gate−to−Source Voltage − Non−Repetitive (tp < 10 ms)
VGS
±30
V
Continuous Drain Current (RqJC) (Note 1)
Power Dissipation (RqJC)
TC = 25°C
ID
Steady TC = 100°C
State
TC = 25°C
PD
98
A
69
115
W
Pulsed Drain Current
tp = 10 ms
IDM
335
A
Operating Junction and Storage Temperature TJ, Tstg −55 to °C 175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (L = 0.3 mH)
IS
96
A
EAS
205 mJ
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Junction−to−Case (Drain)
RqJC
Junction−to−Ambient − Steady State (Note 2) RqJA
1. Limited by package to 50 A continuous. 2. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces.
Value 1.3 37
Unit °C/W
www.onsemi.com
V(BR)DSS 60 V
RDS(on) MAX 5.7 mW @ 10 V
D
ID MAX 98 A
N−Channel G
S...
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