IXGQ85N33PCD1

Advance Technical Information PolarTM High Speed IGBT with Anti-Parallel Diode for PDP Sustain Circuit IXGQ85N33PCD1 VCES ICP VCE(sat) = = ≤ 330 V 340 A 2.1 V Symbol V CES Test Conditions TJ = 25°C to 150°C VGEM IC25 ICP IDP IC(RMS) SSOA (RBSOA) TC = 25°C, IGBT chip capability TJ ≤ 150°C, tp ≤ 1 μs, D ≤ 1% TJ ≤ 150°C, tp < 10 μs Lead current limit VGE = 15 V, TVJ = 150°C, RG = 20 Ω Clamped inductive load, VCE < 300 V PC TC = 25°C TJ TJM T stg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic body Md Mounting torque Weight Maximum Ratings 330 V TO-3P ±30 V 85 340 40 A GC A E (TAB) G = Gate C = Collector A E = Emitter TAb = Collector 75 A ICM = 96 A 150 -55 ... +150 150 -55 ... +150 300 W °C °C °C °C Features International standard package Fast tfi for minimum turn off switching losses MOS Gate turn-on - drive simplicity Positive dVsat/dt for paralleling 260 1.3/10 5.5 Nm/lb.in. g ≤ Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. V GE(th) IC = 1 mA, VCE = VGE 3.0 6.0 V ICES VCE = 330 V VGE = 0 V TJ = 125°C 1 μA 200 μA IGES VCE = 0 V, VGE = ±20 V ±100 nA VCE(sat) VGE = 15V, Note 1 IC = 50 A TJ = 125°C IC = 100 A TJ = 125°C 1.43 2.1 V 1.47 V 1.85 3.0 V 2.0 V © 2006 IXYS CORPORATION, All rights reserved DS99610D(02/07) IXGQ85N33PCD1 SymbolTest Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. gfs IC ...