FP1A4A

DATA SHEET COMPOUND TRANSISTOR FP1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES Up to 0.7 A current drive available On-chip bias resistor Low power consumption during drive PACKAGE DRAWING (UNIT: mm) QUALITY GRADES Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. FP1 SERIES LISTS Products FP1A4A FP1L2Q FP1A3M FP1F3P FP1J3P FP1L3N FP1A4M Marking S30 S31 S32 S33 S36 S34 S35 R1 (KΩ) − 0.47 1.0 2.2 3.3 4.7 10 R2 (KΩ) 10 4.7 1.0 10 10 10 10 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO −25 V Collector to emitter voltage VCEO −25 V Emitter to base voltage VEBO −10 V Collector current (DC) IC(DC) −0.7 A Collector current (Pulse) IC(pulse) * −1.0 A Base current (DC) IB(DC) −20 mA Total power dissipation PT 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C * PW ≤ 10 ms, duty cycle ≤ 50 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16181EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K)...