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FSS230R

Intersil Corporation

N-Channel Power MOSFETs

FSS230D, FSS230R June 1998 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features • 8A, 200V...


Intersil Corporation

FSS230R

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Description
FSS230D, FSS230R June 1998 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features 8A, 200V, rDS(ON) = 0.440Ω Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM Photo Current - 3.0nA Per-RAD(Si)/s Typically Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 Ordering Information RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND 10K Commercial FSS230D1 10K TXV FSS230D3 100K 100K Commercial TXV FSS230R1 FSS230R3 100K Space FSS230R4 Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space ...




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