N-Channel Power MOSFETs
FSS230D, FSS230R
June 1998
8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
Features
• 8A, 200V...
Description
FSS230D, FSS230R
June 1998
8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
Features
8A, 200V, rDS(ON) = 0.440Ω Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
Single Event
- Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM Photo Current
- 3.0nA Per-RAD(Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commercial FSS230D1
10K TXV
FSS230D3
100K 100K
Commercial TXV
FSS230R1 FSS230R3
100K
Space
FSS230R4
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space ...
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