MMBT5401L, SMMBT5401L, NSVMMBT5401L
High Voltage Transistor
PNP Silicon
Features
• S and NSV Prefix for Automotive and...
MMBT5401L, SMMBT5401L, NSVMMBT5401L
High Voltage
Transistor
PNP Silicon
Features
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−150
Vdc
Collector −Base Voltage
VCBO
−160
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−500
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate Above 25°C
PD 225 mW 1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate Above 25°C
PD 300 mW 2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg
1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
−55 to +150
°C
http://onsemi.com
SOT−23 (TO−236) CASE 318 STYLE 6
COLLECTOR 3
1 BASE
2 EMITTER
MARKING DIAGRAM
2L M G G
1
2L = Specific Device Code M = Date Code* G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/...