SMMBT4401L

MMBT4401L, SMMBT4401L Switching Transistor NPN Silicon Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Collector Current − Peak THERMAL CHARACTERISTICS Symbol VCEO VCBO VEBO IC ICM Value 40 60 6.0 600 900 Unit Vdc Vdc Vdc mAdc mAdc Characteristic Total Device Dissipation FR− 5 Board (Note 1) @TA = 25°C Derate above 25°C Symbol PD Max 225 1.8 Unit mW mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceedi...