Switching Diode
BAS16L, SBAS16L
Switching Diode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Co...
Description
BAS16L, SBAS16L
Switching Diode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
Peak Forward Current
Non−Repetitive Peak Forward Surge Current 60 Hz
VR IF IFSM(surge)
100 200 500
V mA mA
Repetitive Peak Forward Current (Note 3)
IFRM 1.0 A
Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge)
t = 1 ms t = 10 ms t = 100 ms t = 1 ms
t=1s
IFSM
36.0 18.0 6.0 3.0 0.7
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C Derate above 25°C
PD
225 mW 1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C
RqJA PD
556 °C/W 300 mW 2.4 mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
Junction and Storage Temperature
TJ, Tstg
1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Square Wave, f = 40 kHz, PW = 200 ns
Test Duration = 60 s, TJ = 25°C prior to surge.
417 −55 to +150
°C/W °C
http://onsemi.com
3 CATHODE
...
Similar Datasheet